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Electronic structure of In2O3 and Sn-doped In2O3 by hard x-ray photoemission spectroscopy

Körber, C. ; Krishnakumar, V. ; Klein, Andreas ; Panaccione, G. ; Torelli, P. ; Walsh, A. ; Lopes Ferreira da Silva, J. ; Wei, S.-H. ; Egdell, R. G. ; Payne, D. J. (2010)
Electronic structure of In2O3 and Sn-doped In2O3 by hard x-ray photoemission spectroscopy.
In: Physical Review B, 81 (16)
doi: 10.1103/PhysRevB.81.165207
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The valence and core levels of In(2)O(3) and Sn-doped In(2)O(3) have been studied by hard x-ray photoemission spectroscopy (hv = 6000 eV) and by conventional Al K alpha (hv = 1486.6 eV) x-ray photoemission spectroscopy. The experimental spectra are compared with density-functional theory calculations. It is shown that structure deriving from electronic levels with significant In or Sn 5s character is selectively enhanced under 6000 eV excitation. This allows us to infer that conduction band states in Sn-doped samples and states at the bottom of the valence band both contain a pronounced In 5s contribution. The In 3d core line measured at hv = 1486.6 eV for both undoped and Sn-doped In(2)O(3) display an asymmetric lineshape, and may be fitted with two components associated with screened and unscreened final states. The In 3d core line spectra excited at hv = 6000 eV for the Sn-doped samples display pronounced shoulders and demand a fit with two components. The In 3d core line spectrum for the undoped sample can also be fitted with two components, although the relative intensity of the component associated with the screened final state is low, compared to excitation at 1486.6 eV. These results are consistent with a high concentration of carriers confined close to the surface of nominally undoped In(2)O(3). This conclusion is in accord with the fact that a conduction band feature observed for undoped In(2)O(3) in Al K alpha x-ray photoemission is much weaker than expected in hard x-ray photoemission.

Typ des Eintrags: Artikel
Erschienen: 2010
Autor(en): Körber, C. ; Krishnakumar, V. ; Klein, Andreas ; Panaccione, G. ; Torelli, P. ; Walsh, A. ; Lopes Ferreira da Silva, J. ; Wei, S.-H. ; Egdell, R. G. ; Payne, D. J.
Art des Eintrags: Bibliographie
Titel: Electronic structure of In2O3 and Sn-doped In2O3 by hard x-ray photoemission spectroscopy
Sprache: Englisch
Publikationsjahr: 2010
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Physical Review B
Jahrgang/Volume einer Zeitschrift: 81
(Heft-)Nummer: 16
DOI: 10.1103/PhysRevB.81.165207
Kurzbeschreibung (Abstract):

The valence and core levels of In(2)O(3) and Sn-doped In(2)O(3) have been studied by hard x-ray photoemission spectroscopy (hv = 6000 eV) and by conventional Al K alpha (hv = 1486.6 eV) x-ray photoemission spectroscopy. The experimental spectra are compared with density-functional theory calculations. It is shown that structure deriving from electronic levels with significant In or Sn 5s character is selectively enhanced under 6000 eV excitation. This allows us to infer that conduction band states in Sn-doped samples and states at the bottom of the valence band both contain a pronounced In 5s contribution. The In 3d core line measured at hv = 1486.6 eV for both undoped and Sn-doped In(2)O(3) display an asymmetric lineshape, and may be fitted with two components associated with screened and unscreened final states. The In 3d core line spectra excited at hv = 6000 eV for the Sn-doped samples display pronounced shoulders and demand a fit with two components. The In 3d core line spectrum for the undoped sample can also be fitted with two components, although the relative intensity of the component associated with the screened final state is low, compared to excitation at 1486.6 eV. These results are consistent with a high concentration of carriers confined close to the surface of nominally undoped In(2)O(3). This conclusion is in accord with the fact that a conduction band feature observed for undoped In(2)O(3) in Al K alpha x-ray photoemission is much weaker than expected in hard x-ray photoemission.

Freie Schlagworte: ITO In2O3 photoemission XPS
Schlagworte:
Einzelne SchlagworteSprache
PHOTOELECTRON ANGULAR-DISTRIBUTION; TRANSPARENT CONDUCTING OXIDES; TOTAL-ENERGY CALCULATIONS; INDIUM-TIN-OXIDE; WAVE BASIS-SET; OPTICAL-PROPERTIES; VOLPE PROJECT; TIN(IV) OXIDE; SURFACE; PARAMETERSEnglisch
Zusätzliche Informationen:

SFB 595 D3

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
DFG-Sonderforschungsbereiche (inkl. Transregio)
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche
Zentrale Einrichtungen
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden
Hinterlegungsdatum: 29 Okt 2011 08:08
Letzte Änderung: 23 Jul 2021 15:23
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Schlagworte:
Einzelne SchlagworteSprache
PHOTOELECTRON ANGULAR-DISTRIBUTION; TRANSPARENT CONDUCTING OXIDES; TOTAL-ENERGY CALCULATIONS; INDIUM-TIN-OXIDE; WAVE BASIS-SET; OPTICAL-PROPERTIES; VOLPE PROJECT; TIN(IV) OXIDE; SURFACE; PARAMETERSEnglisch
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