Nandi, Uttam ; Mohammadi, Mahdad ; Lu, Hong ; Norman, Justin ; Gossard, Arthur C. ; Alff, Lambert ; Preu, Sascha (2022)
Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation.
In: Journal of Vacuum Science & Technology A, 2021, 39 (2)
doi: 10.26083/tuprints-00020601
Artikel, Zweitveröffentlichung, Verlagsversion
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Kurzbeschreibung (Abstract)
ErAs:In(Al)GaAs photoconductors have proven to be outstanding devices for photonic terahertz (0.1–10 THz) generation and detection with previously reported sub-0.5 ps carrier lifetimes. We present the so far most detailed material characterization of these superlattices composed of ErAs, InGaAs, and InAlAs layers grown by molecular beam epitaxy. The variation of the material properties as a function of the ErAs concentration and the superlattice structure is discussed with focus on source materials. Infrared spectroscopy shows an absorption coefficient in the range of 4700–6600 cm⁻¹ at 1550 nm, with shallow absorption edges toward longer wavelengths caused by absorption of ErAs precipitates. IV characterization and Hall measurements show that samples with only 0.8 monolayers of electrically compensated ErAs precipitates (p-delta-doped at 5 x 10¹³ cm⁻²) and aluminum-containing spacer layers enable high dark resistance (~10–20 MΩ) and high breakdown field strengths beyond 100 kV/cm, corresponding to > 500 V for a 50 μm gap. With higher ErAs concentration of 1.6 ML (2.4 ML), the resistance decreases by a factor of ~40 (120) for an otherwise identical superlattice structure. We propose a theoretical model for calculation of the excess current generated due to heating and for the estimation of the photocurrent from the total illuminated current. The paper concludes with terahertz time-domain spectroscopy measurements demonstrating the strengths of the material system and validating the proposed model.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2022 |
| Autor(en): | Nandi, Uttam ; Mohammadi, Mahdad ; Lu, Hong ; Norman, Justin ; Gossard, Arthur C. ; Alff, Lambert ; Preu, Sascha |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation |
| Sprache: | Englisch |
| Publikationsjahr: | 2022 |
| Publikationsdatum der Erstveröffentlichung: | 2021 |
| Verlag: | AIP |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Vacuum Science & Technology A |
| Jahrgang/Volume einer Zeitschrift: | 39 |
| (Heft-)Nummer: | 2 |
| Kollation: | 9 Seiten |
| DOI: | 10.26083/tuprints-00020601 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/20601 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichungsservice |
| Kurzbeschreibung (Abstract): | ErAs:In(Al)GaAs photoconductors have proven to be outstanding devices for photonic terahertz (0.1–10 THz) generation and detection with previously reported sub-0.5 ps carrier lifetimes. We present the so far most detailed material characterization of these superlattices composed of ErAs, InGaAs, and InAlAs layers grown by molecular beam epitaxy. The variation of the material properties as a function of the ErAs concentration and the superlattice structure is discussed with focus on source materials. Infrared spectroscopy shows an absorption coefficient in the range of 4700–6600 cm⁻¹ at 1550 nm, with shallow absorption edges toward longer wavelengths caused by absorption of ErAs precipitates. IV characterization and Hall measurements show that samples with only 0.8 monolayers of electrically compensated ErAs precipitates (p-delta-doped at 5 x 10¹³ cm⁻²) and aluminum-containing spacer layers enable high dark resistance (~10–20 MΩ) and high breakdown field strengths beyond 100 kV/cm, corresponding to > 500 V for a 50 μm gap. With higher ErAs concentration of 1.6 ML (2.4 ML), the resistance decreases by a factor of ~40 (120) for an otherwise identical superlattice structure. We propose a theoretical model for calculation of the excess current generated due to heating and for the estimation of the photocurrent from the total illuminated current. The paper concludes with terahertz time-domain spectroscopy measurements demonstrating the strengths of the material system and validating the proposed model. |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-206014 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) |
| Hinterlegungsdatum: | 16 Feb 2022 13:43 |
| Letzte Änderung: | 17 Feb 2022 06:06 |
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- Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation. (deposited 16 Feb 2022 13:43) [Gegenwärtig angezeigt]
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