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Detailed photoluminescence studies of thin film Cu₂S for determination of quasi-Fermi level splitting and defect levels

Sträter, Hendrik ; Brüggemann, R. ; Siol, S. ; Klein, Andreas ; Jaegermann, Wolfram ; Bauer, G. H. (2021)
Detailed photoluminescence studies of thin film Cu₂S for determination of quasi-Fermi level splitting and defect levels.
In: Journal of Applied Physics, 114 (23)
doi: 10.26083/tuprints-00019912
Artikel, Zweitveröffentlichung, Verlagsversion

Kurzbeschreibung (Abstract)

We have studied chalcocite (Cu₂S) layers prepared by physical vapor deposition with varying deposition parameters by calibrated spectral photoluminescence (PL) and by confocal PL with lateral resolution of Δ x≈0.9 μm. Calibrated PL experiments as a function of temperature T and excitation fluxes were performed to obtain the absolute PL-yield and to calculate the splitting of the quasi-Fermi levels (QFLs) μ=Ef,n−Ef,p at an excitation flux equivalent to the AM 1.5 spectrum and the absorption coefficient α(ℏω), both in the temperature range of 20 K≤T≤400 K. The PL-spectra reveal two peaks at E#1=1.17 eV and E#2=1.3 eV. The samples show a QFL-splitting of μ>700 meV associated with a pseudo band gap of Eg=1.25 eV. The high-energy peak shows an unexpected temperature behavior, namely, an increase of PL-yield with rising temperature at variance with the behavior of QFL-splitting that decreases with rising T.

Typ des Eintrags: Artikel
Erschienen: 2021
Autor(en): Sträter, Hendrik ; Brüggemann, R. ; Siol, S. ; Klein, Andreas ; Jaegermann, Wolfram ; Bauer, G. H.
Art des Eintrags: Zweitveröffentlichung
Titel: Detailed photoluminescence studies of thin film Cu₂S for determination of quasi-Fermi level splitting and defect levels
Sprache: Englisch
Publikationsjahr: 2021
Verlag: AIP Publishing
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Applied Physics
Jahrgang/Volume einer Zeitschrift: 114
(Heft-)Nummer: 23
Kollation: 8 Seiten
DOI: 10.26083/tuprints-00019912
URL / URN: https://tuprints.ulb.tu-darmstadt.de/19912
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Herkunft: Zweitveröffentlichungsservice
Kurzbeschreibung (Abstract):

We have studied chalcocite (Cu₂S) layers prepared by physical vapor deposition with varying deposition parameters by calibrated spectral photoluminescence (PL) and by confocal PL with lateral resolution of Δ x≈0.9 μm. Calibrated PL experiments as a function of temperature T and excitation fluxes were performed to obtain the absolute PL-yield and to calculate the splitting of the quasi-Fermi levels (QFLs) μ=Ef,n−Ef,p at an excitation flux equivalent to the AM 1.5 spectrum and the absorption coefficient α(ℏω), both in the temperature range of 20 K≤T≤400 K. The PL-spectra reveal two peaks at E#1=1.17 eV and E#2=1.3 eV. The samples show a QFL-splitting of μ>700 meV associated with a pseudo band gap of Eg=1.25 eV. The high-energy peak shows an unexpected temperature behavior, namely, an increase of PL-yield with rising temperature at variance with the behavior of QFL-splitting that decreases with rising T.

Status: Verlagsversion
URN: urn:nbn:de:tuda-tuprints-199128
Sachgruppe der Dewey Dezimalklassifikatin (DDC): 500 Naturwissenschaften und Mathematik > 530 Physik
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
Hinterlegungsdatum: 16 Nov 2021 12:30
Letzte Änderung: 17 Nov 2021 06:20
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