Nandi, Uttam ; Dutzi, Katja ; Deninger, Anselm ; Lu, Hong ; Norman, Justin ; Gossard, Arthur C. ; Vieweg, Nico ; Preu, Sascha (2020)
ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW.
In: Optics Letters, 45 (10)
doi: 10.1364/OL.388870
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Superlattice structures of In(Al)GaAs with localized ErAs trap centers feature excellent material properties for terahertz (THz) generation and detection. The carrier lifetime of these materials as emitter and receiver has been measured as 1.76 ps and 0.39 ps, respectively. Packaged photoconductors driven by a 1550 nm, 90 fs commercial Toptica ``TeraFlash pro'' system feature a 4.5 THz single shot bandwidth with more than 60 dB dynamic range. The emitted THz power of the ErAs:In(Al)GaAs emitter versus laser power has been recorded with a pyroelectric detector calibrated by the Physikalisch Technische Bundesanstalt (PTB). The maximum power was 164 µW at a laser power of 42 mW and a bias of 200 V.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Nandi, Uttam ; Dutzi, Katja ; Deninger, Anselm ; Lu, Hong ; Norman, Justin ; Gossard, Arthur C. ; Vieweg, Nico ; Preu, Sascha |
| Art des Eintrags: | Bibliographie |
| Titel: | ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW |
| Sprache: | Englisch |
| Publikationsjahr: | Mai 2020 |
| Verlag: | OSA Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Optics Letters |
| Jahrgang/Volume einer Zeitschrift: | 45 |
| (Heft-)Nummer: | 10 |
| DOI: | 10.1364/OL.388870 |
| URL / URN: | http://ol.osa.org/abstract.cfm?URI=ol-45-10-2812 |
| Kurzbeschreibung (Abstract): | Superlattice structures of In(Al)GaAs with localized ErAs trap centers feature excellent material properties for terahertz (THz) generation and detection. The carrier lifetime of these materials as emitter and receiver has been measured as 1.76 ps and 0.39 ps, respectively. Packaged photoconductors driven by a 1550 nm, 90 fs commercial Toptica ``TeraFlash pro'' system feature a 4.5 THz single shot bandwidth with more than 60 dB dynamic range. The emitted THz power of the ErAs:In(Al)GaAs emitter versus laser power has been recorded with a pyroelectric detector calibrated by the Physikalisch Technische Bundesanstalt (PTB). The maximum power was 164 µW at a laser power of 42 mW and a bias of 200 V. |
| Freie Schlagworte: | Detector materials, High power lasers, Laser beams, Laser systems, Material properties, Optical systems |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > THz Bauelemente und THz Systeme 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Terahertz Systems |
| Hinterlegungsdatum: | 08 Mär 2021 07:25 |
| Letzte Änderung: | 10 Dez 2021 07:12 |
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