Koslowski, Nico ; Hoffmann, Rudolf C. ; Trouillet, Vanessa ; Bruns, Michael ; Foro, Sabine ; Schneider, Jörg J. (2019)
Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route.
In: RSC Advances, 9 (54)
doi: 10.1039/c9ra05348d
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO(2)1) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1-3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 degrees C, with areal capacity values up to 250 nF cm(-2), leakage current densities below 1.0 x 10(-9) A cm(-2) (at 1 MV cm(-1)) and breakdown voltages above 2 MV cm(-1). Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed YxOy based TFT was fabricated employing the precursor Y-DEM-NO(2)1. The device exhibits decent TFT characteristics with a saturation mobility (mu(sat)) of 2.1 cm(2) V-1 s(-1), a threshold voltage (V-th) of 6.9 V and an on/off current ratio (I-on/off) of 7.6 x 10(5).
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2019 |
| Autor(en): | Koslowski, Nico ; Hoffmann, Rudolf C. ; Trouillet, Vanessa ; Bruns, Michael ; Foro, Sabine ; Schneider, Jörg J. |
| Art des Eintrags: | Bibliographie |
| Titel: | Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route |
| Sprache: | Englisch |
| Publikationsjahr: | 7 Oktober 2019 |
| Verlag: | Royal Society of Chemistry |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | RSC Advances |
| Jahrgang/Volume einer Zeitschrift: | 9 |
| (Heft-)Nummer: | 54 |
| DOI: | 10.1039/c9ra05348d |
| URL / URN: | https://doi.org/10.1039/c9ra05348d |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO(2)1) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1-3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 degrees C, with areal capacity values up to 250 nF cm(-2), leakage current densities below 1.0 x 10(-9) A cm(-2) (at 1 MV cm(-1)) and breakdown voltages above 2 MV cm(-1). Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed YxOy based TFT was fabricated employing the precursor Y-DEM-NO(2)1. The device exhibits decent TFT characteristics with a saturation mobility (mu(sat)) of 2.1 cm(2) V-1 s(-1), a threshold voltage (V-th) of 6.9 V and an on/off current ratio (I-on/off) of 7.6 x 10(5). |
| Zusätzliche Informationen: | The acquisition of the K-Alpha(+) instrument at KIT was supported by the German Federal Ministry of Economics and Technology. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Strukturforschung 07 Fachbereich Chemie 07 Fachbereich Chemie > Eduard Zintl-Institut > Fachgebiet Anorganische Chemie 07 Fachbereich Chemie > Eduard Zintl-Institut |
| Hinterlegungsdatum: | 10 Sep 2020 05:10 |
| Letzte Änderung: | 03 Jul 2024 02:47 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
Verfügbare Versionen dieses Eintrags
-
Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route. (deposited 28 Mär 2022 12:19)
- Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route. (deposited 10 Sep 2020 05:10) [Gegenwärtig angezeigt]
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum