Hatada, Ruriko ; Flege, Stefan ; Ensinger, Wolfgang ; Hesse, Sabine ; Tanabe, Shuji ; Nishimura, Yasuhisa ; Baba, Koumei (2020)
Preparation of Aniline-Based Nitrogen-Containing Diamond-Like Carbon Films with Low Electrical Resistivity.
In: Coatings, 10 (1)
doi: 10.3390/coatings10010054
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
The intrinsic high electrical resistivity of diamond-like carbon (DLC) films prevents their use in certain applications. The addition of metal or nitrogen during the preparation of the DLC films leads to a lower resistivity of the films, but it is usually accompanied by several disadvantages, such as a potential contamination risk for surfaces in contact with the film, a limited area that can be coated, deteriorated mechanical properties or low deposition rates of the films. To avoid these problems, DLC films have been prepared by plasma source ion implantation using aniline as a precursor gas, either in pure form or mixed with acetylene. The nitrogen from the precursor aniline is incorporated into the DLC films, leading to a reduced electrical resistivity. Film properties such as hardness, surface roughness and friction coefficient are nearly unchanged as compared to an additionally prepared reference sample, which was deposited using only pure acetylene as precursor gas.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Hatada, Ruriko ; Flege, Stefan ; Ensinger, Wolfgang ; Hesse, Sabine ; Tanabe, Shuji ; Nishimura, Yasuhisa ; Baba, Koumei |
| Art des Eintrags: | Bibliographie |
| Titel: | Preparation of Aniline-Based Nitrogen-Containing Diamond-Like Carbon Films with Low Electrical Resistivity |
| Sprache: | Englisch |
| Publikationsjahr: | 8 Januar 2020 |
| Verlag: | MDPI |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Coatings |
| Jahrgang/Volume einer Zeitschrift: | 10 |
| (Heft-)Nummer: | 1 |
| DOI: | 10.3390/coatings10010054 |
| URL / URN: | https://doi.org/10.3390/coatings10010054 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | The intrinsic high electrical resistivity of diamond-like carbon (DLC) films prevents their use in certain applications. The addition of metal or nitrogen during the preparation of the DLC films leads to a lower resistivity of the films, but it is usually accompanied by several disadvantages, such as a potential contamination risk for surfaces in contact with the film, a limited area that can be coated, deteriorated mechanical properties or low deposition rates of the films. To avoid these problems, DLC films have been prepared by plasma source ion implantation using aniline as a precursor gas, either in pure form or mixed with acetylene. The nitrogen from the precursor aniline is incorporated into the DLC films, leading to a reduced electrical resistivity. Film properties such as hardness, surface roughness and friction coefficient are nearly unchanged as compared to an additionally prepared reference sample, which was deposited using only pure acetylene as precursor gas. |
| Freie Schlagworte: | Diamond-like carbon, aniline, electrical resistivity, plasma-enhanced chemical vapor deposition, plasma source ion implantation |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Physics of Surfaces |
| Hinterlegungsdatum: | 14 Feb 2020 10:31 |
| Letzte Änderung: | 29 Nov 2023 06:10 |
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| Suche nach Titel in: | TUfind oder in Google |
Verfügbare Versionen dieses Eintrags
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Preparation of Aniline-Based Nitrogen-Containing Diamond-Like Carbon Films with Low Electrical Resistivity. (deposited 28 Nov 2023 13:50)
- Preparation of Aniline-Based Nitrogen-Containing Diamond-Like Carbon Films with Low Electrical Resistivity. (deposited 14 Feb 2020 10:31) [Gegenwärtig angezeigt]
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