Hatada, Ruriko and Flege, Stefan and Ensinger, Wolfgang and Hesse, Sabine and Tanabe, Shuji and Nishimura, Yasuhisa and Baba, Koumei (2020):
Preparation of Aniline-Based Nitrogen-Containing Diamond-Like Carbon Films with Low Electrical Resistivity.
In: Coatings, 10 (1), p. 54. MDPI, ISSN 2079-6412,
DOI: 10.3390/coatings10010054,
[Article]
Abstract
The intrinsic high electrical resistivity of diamond-like carbon (DLC) films prevents their use in certain applications. The addition of metal or nitrogen during the preparation of the DLC films leads to a lower resistivity of the films, but it is usually accompanied by several disadvantages, such as a potential contamination risk for surfaces in contact with the film, a limited area that can be coated, deteriorated mechanical properties or low deposition rates of the films. To avoid these problems, DLC films have been prepared by plasma source ion implantation using aniline as a precursor gas, either in pure form or mixed with acetylene. The nitrogen from the precursor aniline is incorporated into the DLC films, leading to a reduced electrical resistivity. Film properties such as hardness, surface roughness and friction coefficient are nearly unchanged as compared to an additionally prepared reference sample, which was deposited using only pure acetylene as precursor gas.
| Item Type: | Article |
|---|---|
| Erschienen: | 2020 |
| Creators: | Hatada, Ruriko and Flege, Stefan and Ensinger, Wolfgang and Hesse, Sabine and Tanabe, Shuji and Nishimura, Yasuhisa and Baba, Koumei |
| Title: | Preparation of Aniline-Based Nitrogen-Containing Diamond-Like Carbon Films with Low Electrical Resistivity |
| Language: | English |
| Abstract: | The intrinsic high electrical resistivity of diamond-like carbon (DLC) films prevents their use in certain applications. The addition of metal or nitrogen during the preparation of the DLC films leads to a lower resistivity of the films, but it is usually accompanied by several disadvantages, such as a potential contamination risk for surfaces in contact with the film, a limited area that can be coated, deteriorated mechanical properties or low deposition rates of the films. To avoid these problems, DLC films have been prepared by plasma source ion implantation using aniline as a precursor gas, either in pure form or mixed with acetylene. The nitrogen from the precursor aniline is incorporated into the DLC films, leading to a reduced electrical resistivity. Film properties such as hardness, surface roughness and friction coefficient are nearly unchanged as compared to an additionally prepared reference sample, which was deposited using only pure acetylene as precursor gas. |
| Journal or Publication Title: | Coatings |
| Journal volume: | 10 |
| Number: | 1 |
| Publisher: | MDPI |
| Uncontrolled Keywords: | Diamond-like carbon, aniline, electrical resistivity, plasma-enhanced chemical vapor deposition, plasma source ion implantation |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Material Analytics 11 Department of Materials and Earth Sciences > Material Science > Physics of Surfaces |
| Date Deposited: | 14 Feb 2020 10:31 |
| DOI: | 10.3390/coatings10010054 |
| Official URL: | https://doi.org/10.3390/coatings10010054 |
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