Nandi, Uttam ; Faridi, Fahd R. ; Fernandez Olvera, Anuar de Jesus ; Norman, Justin ; Lu, Hong ; Gossard, Arthur C. ; Preu, Sascha (2019)
High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors.
2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP). Bochum, Germany (16.07.2019-18.07.2019)
doi: 10.1109/IMWS-AMP.2019.8880067
Konferenzveröffentlichung, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
This paper reviews progress on ErAs:In(Al)GaAs photomixers for operation with telecom lasers at 1550 nm, including linearity and absorption coefficient measurements, specifications, packaging example, and applications in vector spectrometry. We have achieved a receiver noise equivalent power as low as 1.81 fW/Hz at 188 GHz under continuous-wave operation and a bandwidth of more than 6 THz and a peak dynamic range of 89 dB under pulsed operation.
| Typ des Eintrags: | Konferenzveröffentlichung |
|---|---|
| Erschienen: | 2019 |
| Autor(en): | Nandi, Uttam ; Faridi, Fahd R. ; Fernandez Olvera, Anuar de Jesus ; Norman, Justin ; Lu, Hong ; Gossard, Arthur C. ; Preu, Sascha |
| Art des Eintrags: | Bibliographie |
| Titel: | High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors |
| Sprache: | Englisch |
| Publikationsjahr: | Juli 2019 |
| Ort: | Piscataway |
| Verlag: | IEEE |
| Buchtitel: | IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) |
| Veranstaltungstitel: | 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) |
| Veranstaltungsort: | Bochum, Germany |
| Veranstaltungsdatum: | 16.07.2019-18.07.2019 |
| DOI: | 10.1109/IMWS-AMP.2019.8880067 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | This paper reviews progress on ErAs:In(Al)GaAs photomixers for operation with telecom lasers at 1550 nm, including linearity and absorption coefficient measurements, specifications, packaging example, and applications in vector spectrometry. We have achieved a receiver noise equivalent power as low as 1.81 fW/Hz at 188 GHz under continuous-wave operation and a bandwidth of more than 6 THz and a peak dynamic range of 89 dB under pulsed operation. |
| Freie Schlagworte: | aluminium compounds;erbium compounds;indium compounds;photoconducting devices;telecom lasers;absorption coefficient measurements;vector spectrometry;receiver noise equivalent power;continuous-wave operation;high dynamic range THz systems;photomixers;frequency 188.0 GHz;wavelength 1550.0 nm;gain 89.0 dB;ErAs:In(Al)GaAs;Receivers;Photoconducting materials;Measurement by laser beam;Absorption;Bandwidth;Dynamic range;Photonics;terahertz;photoconductor;telecom wavelength;continuous-wave;time domain spectroscopy;vector spectroscopy |
| Zusätzliche Informationen: | German Research Foundation (DFG) funding project 278381540 (REPHCON) |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > THz Bauelemente und THz Systeme 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Terahertz Systems |
| Hinterlegungsdatum: | 28 Okt 2019 11:08 |
| Letzte Änderung: | 26 Jul 2024 07:57 |
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| Suche nach Titel in: | TUfind oder in Google |
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High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors. (deposited 26 Jan 2020 20:57)
- High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors. (deposited 28 Okt 2019 11:08) [Gegenwärtig angezeigt]
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