Sanctis, Shawn ; Hoffmann, Rudolf C. ; Koslowski, Nico ; Foro, Sabine ; Bruns, Michael ; Schneider, Jörg J. (2018)
Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications.
In: Chemistry - An Asian Journal, 13 (24)
doi: 10.1002/asia.201801371
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Combustion synthesis of semiconducting amorphous indium gallium zinc oxide IGZO (In:Ga:Zn, 7:1:1.5) thin films was carried out using urea nitrate precursor compounds of indium(III), gallium(III) and zinc(II). This approach provides further understanding towards the oxide formation process under a moderate temperature regime by employment of well‐defined coordination compounds. All precursor compounds were fully characterized by spectroscopic techniques as well as by single crystal structure analysis. Their intrinsic thermal decomposition was studied by a combination of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG‐MS/IR). For all precursors a multistep decomposition involving a complex redox‐reaction pathway under in situ formation of nitrogen containing molecular species was observed. Controlled thermal conversion of a mixture of the indium, gallium and zinc urea nitrate complexes into ternary amorphous IGZO films could thus be achieved. Thin film transistors (TFTs) were fabricated from a defined compositional mixture of the molecular precursors. The TFT devices exhibited decent charge carrier mobilities of 0.4 and 3.1 cm2/(Vs) after annealing of the deposited films at temperatures as low as 250 and 350 °C, respectively. This approach represents a significant step further towards a low temperature solution processing of semiconducting thin films.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2018 |
| Autor(en): | Sanctis, Shawn ; Hoffmann, Rudolf C. ; Koslowski, Nico ; Foro, Sabine ; Bruns, Michael ; Schneider, Jörg J. |
| Art des Eintrags: | Bibliographie |
| Titel: | Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications |
| Sprache: | Englisch |
| Publikationsjahr: | 19 Dezember 2018 |
| Verlag: | Wiley VCH, Weinheim, Germany |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Chemistry - An Asian Journal |
| Jahrgang/Volume einer Zeitschrift: | 13 |
| (Heft-)Nummer: | 24 |
| DOI: | 10.1002/asia.201801371 |
| URL / URN: | https://doi.org/10.1002/asia.201801371 |
| Kurzbeschreibung (Abstract): | Combustion synthesis of semiconducting amorphous indium gallium zinc oxide IGZO (In:Ga:Zn, 7:1:1.5) thin films was carried out using urea nitrate precursor compounds of indium(III), gallium(III) and zinc(II). This approach provides further understanding towards the oxide formation process under a moderate temperature regime by employment of well‐defined coordination compounds. All precursor compounds were fully characterized by spectroscopic techniques as well as by single crystal structure analysis. Their intrinsic thermal decomposition was studied by a combination of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG‐MS/IR). For all precursors a multistep decomposition involving a complex redox‐reaction pathway under in situ formation of nitrogen containing molecular species was observed. Controlled thermal conversion of a mixture of the indium, gallium and zinc urea nitrate complexes into ternary amorphous IGZO films could thus be achieved. Thin film transistors (TFTs) were fabricated from a defined compositional mixture of the molecular precursors. The TFT devices exhibited decent charge carrier mobilities of 0.4 and 3.1 cm2/(Vs) after annealing of the deposited films at temperatures as low as 250 and 350 °C, respectively. This approach represents a significant step further towards a low temperature solution processing of semiconducting thin films. |
| Freie Schlagworte: | indium, gallium, metal oxides, molecular precursors, thin film transistors, zinc, urea-nitrate compounds |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Strukturforschung |
| Hinterlegungsdatum: | 28 Feb 2019 08:41 |
| Letzte Änderung: | 28 Feb 2019 08:41 |
| PPN: | |
| Sponsoren: | S.S., R.H. and J.J.S. acknowledge financial support through the DFG SPP 1569 program., TEM investigations were performed at ERC Jülich under contract ERC‐TUD1., We gratefully acknowledge J. Engstler and S. Heinschke (both at TUDa) for performing TEM and XRD analysis. |
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