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Broadband Terahertz Detection with Zero-Bias Field-Effect Transistors between 100 GHz and 11.8 THz with a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz

Regensburger, Stefan ; Mukherjee, Amlan k. ; Schönhuber, Sebastian ; Kainz, Martin A. ; Winnerl, Stephan ; Klopf, J. Michael ; Lu, Hong ; Gossard, Arthur C. ; Unterrainer, Karl ; Preu, Sascha (2018)
Broadband Terahertz Detection with Zero-Bias Field-Effect Transistors between 100 GHz and 11.8 THz with a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz.
In: IEEE Transactions on Terahertz Science and Technology, 8 (4)
doi: 10.1109/TTHZ.2018.2843535
Article, Bibliographie

Item Type: Article
Erschienen: 2018
Creators: Regensburger, Stefan ; Mukherjee, Amlan k. ; Schönhuber, Sebastian ; Kainz, Martin A. ; Winnerl, Stephan ; Klopf, J. Michael ; Lu, Hong ; Gossard, Arthur C. ; Unterrainer, Karl ; Preu, Sascha
Type of entry: Bibliographie
Title: Broadband Terahertz Detection with Zero-Bias Field-Effect Transistors between 100 GHz and 11.8 THz with a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz
Language: English
Date: July 2018
Journal or Publication Title: IEEE Transactions on Terahertz Science and Technology
Volume of the journal: 8
Issue Number: 4
DOI: 10.1109/TTHZ.2018.2843535
URL / URN: http://www.tsys.tu-darmstadt.de/Broadband_ZeroBias_FET_THz
Corresponding Links:
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP)
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Devices and Systems
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Systems Technology
Date Deposited: 31 May 2018 16:44
Last Modified: 10 Dec 2021 07:13
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