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Vertical nanowire contacted THz Schottky detectors based on gallium arsenide for zero-bias operation

Hajo, A. S. ; Yilmazoglu, O. ; Küppers, F. (2017)
Vertical nanowire contacted THz Schottky detectors based on gallium arsenide for zero-bias operation.
2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
doi: 10.1109/IRMMW-THz.2017.8067022
Conference or Workshop Item, Bibliographie

Item Type: Conference or Workshop Item
Erschienen: 2017
Creators: Hajo, A. S. ; Yilmazoglu, O. ; Küppers, F.
Type of entry: Bibliographie
Title: Vertical nanowire contacted THz Schottky detectors based on gallium arsenide for zero-bias operation
Language: English
Date: August 2017
Event Title: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
DOI: 10.1109/IRMMW-THz.2017.8067022
Uncontrolled Keywords: III-V semiconductors;Schottky barriers;gallium arsenide;nanowires;semiconductor-metal boundaries;silver;terahertz wave detectors;GaAs-Ag;Schottky diodes;air-bridge contact;gallium arsenide;silver nanowire;terahertz Schottky detectors;vertical nanowire;zero-bias operation;Capacitance;Cutoff frequency;Detectors;Gallium arsenide;Junctions;Schottky barriers;Schottky diodes
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Photonics and Optical Communications
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP)
Date Deposited: 23 Nov 2017 12:59
Last Modified: 13 Dec 2019 11:20
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