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Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire

Hajo, A. S. ; Al-Daffaie, S. ; Yilmazoglu, O. ; Haidar, M. T. ; Küppers, F. (2016):
Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire.
pp. 1-2, 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2016
Creators: Hajo, A. S. ; Al-Daffaie, S. ; Yilmazoglu, O. ; Haidar, M. T. ; Küppers, F.
Title: Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire
Language: English
Uncontrolled Keywords: III-V semiconductors;Schottky barriers;Schottky diodes;aluminium compounds;electrophoresis;gallium arsenide;high electron mobility transistors;nanowires;silver;submillimetre wave antennas;terahertz wave detectors;Ag;AlGaAs-GaAs;HEMT structure;Schottky anode;Schottky contact;air-bridge contact;dielectrophoresis;electric field enhancement;high electron mobility transistor structure;silver metallic nanowires;submicron anode contacts;temperature 293 K to 298 K;terahertz Schottky detectors;terahertz antenna;zero-bias Schottky diode;Anodes;Antennas;Detectors;Gallium arsenide;HEMTs;Schottky barriers;Schottky diodes
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Photonics and Optical Communications
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP)
Event Title: 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)
Date Deposited: 27 Mar 2017 11:42
URL / URN: https://doi.org/10.1109/IRMMW-THz.2016.7758892
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