Abdulmunem, Oday Mazin ; Born, Norman ; Mikulics, Martin ; Balzer, Jan Christof ; Koch, Martin ; Preu, Sascha (2017)
High accuracy terahertz time-domain system for reliable characterization of photoconducting antennas.
In: Microwave and Optical Technology Letters, 59 (2)
Article
Abstract
We report on a terahertz (THz) time-domain system to characterize photoconductive THz emitters and detectors, that is designed for highest reproducibility. This system is excellently suited for studying the performance of THz sources and detectors in a systematic manner, either by varying the substrate materials or the geometrical parameters of metallic antenna contacts building a photoconductive switch. After confirming the reproducibility and stability of the system with errors of only 1.9% (over 3 h) and 2.6% (over 9 days), we use the system to compare the performance of five low temperature grown (LT) GaAs wafers with growth temperatures between 200°C and 300°C.
| Item Type: | Article |
|---|---|
| Erschienen: | 2017 |
| Creators: | Abdulmunem, Oday Mazin ; Born, Norman ; Mikulics, Martin ; Balzer, Jan Christof ; Koch, Martin ; Preu, Sascha |
| Type of entry: | Bibliographie |
| Title: | High accuracy terahertz time-domain system for reliable characterization of photoconducting antennas |
| Language: | English |
| Date: | 2017 |
| Publisher: | Wiley Online Library |
| Journal or Publication Title: | Microwave and Optical Technology Letters |
| Volume of the journal: | 59 |
| Issue Number: | 2 |
| URL / URN: | http://onlinelibrary.wiley.com/doi/10.1002/mop.30322/full |
| Abstract: | We report on a terahertz (THz) time-domain system to characterize photoconductive THz emitters and detectors, that is designed for highest reproducibility. This system is excellently suited for studying the performance of THz sources and detectors in a systematic manner, either by varying the substrate materials or the geometrical parameters of metallic antenna contacts building a photoconductive switch. After confirming the reproducibility and stability of the system with errors of only 1.9% (over 3 h) and 2.6% (over 9 days), we use the system to compare the performance of five low temperature grown (LT) GaAs wafers with growth temperatures between 200°C and 300°C. |
| Uncontrolled Keywords: | photoconductive switch; terahertz; time domain spectroscopy |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Devices and Systems 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Systems Technology |
| Date Deposited: | 10 Feb 2017 18:34 |
| Last Modified: | 10 Dec 2021 07:13 |
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