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Long-term thermal stability of Si-containing diamond-like carbon films prepared by plasma source ion implantation

Hatada, Ruriko ; Baba, Koumei ; Flege, Stefan ; Ensinger, Wolfgang (2016)
Long-term thermal stability of Si-containing diamond-like carbon films prepared by plasma source ion implantation.
In: Surface and Coatings Technology, 305
Article, Bibliographie

Abstract

The long-term stability of silicon-containing diamond-like carbon films was investigated. The samples were prepared by plasma source ion implantation with a mixture of tetramethylsilane (TMS) and acetylene (C2H2) using negative high voltage pulses. The film composition was changed by varying the flow rates of the TMS and C2H2 gases, resulting in a Si content from 0 to 44 at.%. After deposition the films were annealed at temperatures from 523 K to 773 K for 168 h in ambient air. The effect of the Si content on the structure, the mechanical and tribological properties of the DLC films was investigated. A silicon oxide layer is produced on the surface of the film which improves the thermal stability. Mechanical and friction characteristics of the Si-DLC were not much affected by the long-term thermal annealing if the temperature was kept below 573 K.

Item Type: Article
Erschienen: 2016
Creators: Hatada, Ruriko ; Baba, Koumei ; Flege, Stefan ; Ensinger, Wolfgang
Type of entry: Bibliographie
Title: Long-term thermal stability of Si-containing diamond-like carbon films prepared by plasma source ion implantation
Language: English
Date: November 2016
Journal or Publication Title: Surface and Coatings Technology
Volume of the journal: 305
URL / URN: http://www.sciencedirect.com/science/article/pii/S0257897216...
Abstract:

The long-term stability of silicon-containing diamond-like carbon films was investigated. The samples were prepared by plasma source ion implantation with a mixture of tetramethylsilane (TMS) and acetylene (C2H2) using negative high voltage pulses. The film composition was changed by varying the flow rates of the TMS and C2H2 gases, resulting in a Si content from 0 to 44 at.%. After deposition the films were annealed at temperatures from 523 K to 773 K for 168 h in ambient air. The effect of the Si content on the structure, the mechanical and tribological properties of the DLC films was investigated. A silicon oxide layer is produced on the surface of the film which improves the thermal stability. Mechanical and friction characteristics of the Si-DLC were not much affected by the long-term thermal annealing if the temperature was kept below 573 K.

Uncontrolled Keywords: DLC, Friction coefficient, PSII, Silicon incorporation, Thermal stability
Divisions: 11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences
Date Deposited: 20 Sep 2016 05:39
Last Modified: 20 Sep 2016 05:39
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