Hegemann, Dirk ; Riedel, R. ; Oehr, C. (1999)
PACVD derived thin films in the system Si-B-C-N.
In: Chemical vapor deposition, 5 (2)
Article
Abstract
PACVD has been used to obtain SiBCN thin films for the first time at low temperatures (250 °C) from a single-source precursor. In comparison with PACVD BCN, the B:C ratio is the same, but there is a slightly increased N content, and the presence of Si improves the hardness and adhesion characteristics. XPS and FTIR results suggest that most Si atoms are bonded to N and C, with the C being mainly sp2/sp3 hybridized C[BOND]C and C[BOND]N bonds, while B is bonded to N, also with sp2/sp3 hybridization.
| Item Type: | Article |
|---|---|
| Erschienen: | 1999 |
| Creators: | Hegemann, Dirk ; Riedel, R. ; Oehr, C. |
| Type of entry: | Bibliographie |
| Title: | PACVD derived thin films in the system Si-B-C-N |
| Language: | English |
| Date: | March 1999 |
| Publisher: | Wiley |
| Journal or Publication Title: | Chemical vapor deposition |
| Volume of the journal: | 5 |
| Issue Number: | 2 |
| Abstract: | PACVD has been used to obtain SiBCN thin films for the first time at low temperatures (250 °C) from a single-source precursor. In comparison with PACVD BCN, the B:C ratio is the same, but there is a slightly increased N content, and the presence of Si improves the hardness and adhesion characteristics. XPS and FTIR results suggest that most Si atoms are bonded to N and C, with the C being mainly sp2/sp3 hybridized C[BOND]C and C[BOND]N bonds, while B is bonded to N, also with sp2/sp3 hybridization. |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids |
| Date Deposited: | 19 Nov 2008 16:04 |
| Last Modified: | 20 Feb 2020 13:28 |
| PPN: | |
| Funders: | We thank the Fonds der Chemischen Industrie, Frankfurt, for financial support. |
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