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Orientation dependent annealing kinetics of ion tracks in c-SiO2

Schauries, D. ; Leino, A. A. ; Afra, B. ; Rodriguez, M. D. ; Djurabekova, F. ; Nordlund, K. ; Kirby, N. ; Trautmann, C. ; Kluth, P. (2015)
Orientation dependent annealing kinetics of ion tracks in c-SiO2.
In: Journal of Applied Physics, 118 (22)
doi: 10.1063/1.4936601
Article, Bibliographie

Abstract

The structure and thermal response of amorphous ion tracks formed along the [11 (2) over bar0], [10 (1) over bar0], and [0001]-directions in crystalline quartz have been investigated using small angle x-ray scattering. The radii of the ion tracks vary by about 5% (0.3 nm) for tracks along different crystallographic directions. Molecular dynamics simulations reproduce this anisotropy along the [10 (1) over bar0] and [0001] directions and suggest that differences in thermal conductivity along these directions are partly responsible for this observation. Using in situ annealing, tracks along the [10 (1) over bar0 and [0001] directions were shown to recrystallize during thermal annealing around 960-1020 degrees C with activations energies around 6 eV, while those along the [11 (2) over bar0]-direction already disappeared at 640 degrees C with a significantly lower activation energy around 3-4 eV. (C) 2015 AIP Publishing LLC.

Item Type: Article
Erschienen: 2015
Creators: Schauries, D. ; Leino, A. A. ; Afra, B. ; Rodriguez, M. D. ; Djurabekova, F. ; Nordlund, K. ; Kirby, N. ; Trautmann, C. ; Kluth, P.
Type of entry: Bibliographie
Title: Orientation dependent annealing kinetics of ion tracks in c-SiO2
Language: English
Date: 14 December 2015
Publisher: AIP Publishing LLC
Journal or Publication Title: Journal of Applied Physics
Volume of the journal: 118
Issue Number: 22
DOI: 10.1063/1.4936601
Abstract:

The structure and thermal response of amorphous ion tracks formed along the [11 (2) over bar0], [10 (1) over bar0], and [0001]-directions in crystalline quartz have been investigated using small angle x-ray scattering. The radii of the ion tracks vary by about 5% (0.3 nm) for tracks along different crystallographic directions. Molecular dynamics simulations reproduce this anisotropy along the [10 (1) over bar0] and [0001] directions and suggest that differences in thermal conductivity along these directions are partly responsible for this observation. Using in situ annealing, tracks along the [10 (1) over bar0 and [0001] directions were shown to recrystallize during thermal annealing around 960-1020 degrees C with activations energies around 6 eV, while those along the [11 (2) over bar0]-direction already disappeared at 640 degrees C with a significantly lower activation energy around 3-4 eV. (C) 2015 AIP Publishing LLC.

Divisions: 11 Department of Materials and Earth Sciences > Material Science > Ion-Beam-Modified Materials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 29 Feb 2016 12:34
Last Modified: 29 Feb 2016 12:34
PPN:
Funders: P.K. acknowledges the Australian Research Council for financial support.
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