Li, Q.-R. ; Major, M. ; Yazdi, M. Baghaie ; Donner, W. ; Dao, V. H. ; Mercey, B. ; Lüders, U. (2015):
Dimensional crossover in ultrathin buried conducting SrVO3 layers.
In: Physical Review B, 91 (3), APS Publications, ISSN 1098-0121,
[Article]
Abstract
The structure and resistive properties of buried SrVO3 layers between two insulating LaVO3 layers are investigated by varying the thickness of the SrVO3 layers between 3 and 35 monolayers. The thickest SrVO3 layer shows a bulklike metallic behavior, while in the thinnest SrVO3 layer, a weak localization regime is observed below 100 K manifesting a logarithmic temperature dependence. Angular-dependent magnetoresistance measurements indicate a cylindric shape of the Fermi surface, and therefore a two-dimensional transport in the thinnest buried SrVO3 layer. The modification of the charge carrier properties by the reduced thickness of the SrVO3 layer are furthermore underlined by the appearance of a relatively strong positive magnetoresistance under a magnetic field perpendicular to the sample surface. The present study therefore highlights a way to synthesize oxide electrodes with reduced dimension for future oxide electronics application.
| Item Type: | Article |
|---|---|
| Erschienen: | 2015 |
| Creators: | Li, Q.-R. ; Major, M. ; Yazdi, M. Baghaie ; Donner, W. ; Dao, V. H. ; Mercey, B. ; Lüders, U. |
| Title: | Dimensional crossover in ultrathin buried conducting SrVO3 layers |
| Language: | English |
| Abstract: | The structure and resistive properties of buried SrVO3 layers between two insulating LaVO3 layers are investigated by varying the thickness of the SrVO3 layers between 3 and 35 monolayers. The thickest SrVO3 layer shows a bulklike metallic behavior, while in the thinnest SrVO3 layer, a weak localization regime is observed below 100 K manifesting a logarithmic temperature dependence. Angular-dependent magnetoresistance measurements indicate a cylindric shape of the Fermi surface, and therefore a two-dimensional transport in the thinnest buried SrVO3 layer. The modification of the charge carrier properties by the reduced thickness of the SrVO3 layer are furthermore underlined by the appearance of a relatively strong positive magnetoresistance under a magnetic field perpendicular to the sample surface. The present study therefore highlights a way to synthesize oxide electrodes with reduced dimension for future oxide electronics application. |
| Journal or Publication Title: | Physical Review B |
| Volume of the journal: | 91 |
| Issue Number: | 3 |
| Publisher: | APS Publications |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology 11 Department of Materials and Earth Sciences > Material Science > Structure Research 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences |
| Date Deposited: | 21 Apr 2015 10:49 |
| URL / URN: | http://dx.doi.org/10.1103/PhysRevB.91.035420 |
| Identification Number: | doi:10.1103/PhysRevB.91.035420 |
| PPN: | |
| Funders: | This work is financially supported by Conseil Régional de Basse Normandie, France and also guided in the framework of the Erasmus-Mundus International Doctoral School in Functional Materials (IDS FunMat). |
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