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Interrelation between Chemical, Electronic, and Charge Transport Properties of Solution-Processed Indium–Zinc Oxide Semiconductor Thin Films

Häming, Marc ; Issanin, Alexander ; Walker, Daniel ; Seggern, Heinz von ; Jaegermann, Wolfram ; Bonrad, Klaus (2014)
Interrelation between Chemical, Electronic, and Charge Transport Properties of Solution-Processed Indium–Zinc Oxide Semiconductor Thin Films.
In: The Journal of Physical Chemistry C, 118 (24)
doi: 10.1021/jp501956z
Article, Bibliographie

Abstract

Solution-processed metal oxide semiconductors are of high interest for the preparation of high-mobility transparent metal oxide (TMO) semiconductor thin films and thin film transistors (TFTs). It has been shown that the charge transport properties of indium-zinc oxide (IZO) thin films from molecular precursor solutions depend strongly on the preparation conditions, in particular on the precursor conversion temperature T-pc and, to some surprise, also on the concentration of the precursor solution. Therefore, the chemical and the electronic structure of solution-processed IZO thin films have been studied in detail with Xray photoelectron spectroscopy (XPS) under systematic variation of Tpc and the concentration of the precursor solution. A distinct spectral feature is observed in the valence band spectra close to the Fermi level at E-B = 0.45 eV binding energy which correlates with the trends in the sheet resistivity, the field effect mobility mu(FE), and the optical gap E-g(opt) from four-point-probe (4PP), TFT, and UV-vis measurements, respectively. A comprehensive model of the interrelation between the conditions during solution-processing, the chemical and electronic structure, and the charge transport properties is developed.

Item Type: Article
Erschienen: 2014
Creators: Häming, Marc ; Issanin, Alexander ; Walker, Daniel ; Seggern, Heinz von ; Jaegermann, Wolfram ; Bonrad, Klaus
Type of entry: Bibliographie
Title: Interrelation between Chemical, Electronic, and Charge Transport Properties of Solution-Processed Indium–Zinc Oxide Semiconductor Thin Films
Language: English
Date: 19 June 2014
Publisher: ACS Publications
Journal or Publication Title: The Journal of Physical Chemistry C
Volume of the journal: 118
Issue Number: 24
DOI: 10.1021/jp501956z
Abstract:

Solution-processed metal oxide semiconductors are of high interest for the preparation of high-mobility transparent metal oxide (TMO) semiconductor thin films and thin film transistors (TFTs). It has been shown that the charge transport properties of indium-zinc oxide (IZO) thin films from molecular precursor solutions depend strongly on the preparation conditions, in particular on the precursor conversion temperature T-pc and, to some surprise, also on the concentration of the precursor solution. Therefore, the chemical and the electronic structure of solution-processed IZO thin films have been studied in detail with Xray photoelectron spectroscopy (XPS) under systematic variation of Tpc and the concentration of the precursor solution. A distinct spectral feature is observed in the valence band spectra close to the Fermi level at E-B = 0.45 eV binding energy which correlates with the trends in the sheet resistivity, the field effect mobility mu(FE), and the optical gap E-g(opt) from four-point-probe (4PP), TFT, and UV-vis measurements, respectively. A comprehensive model of the interrelation between the conditions during solution-processing, the chemical and electronic structure, and the charge transport properties is developed.

Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Electronic Materials
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 27 Feb 2015 13:36
Last Modified: 13 Aug 2021 14:08
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Funders: We thank TU Darmstadt and Merck KGaA for financial support.
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