Bengtsson, O. ; Maune, H. ; Wiens, A. ; Chevtchenko, S. A. ; Jakoby, R. ; Heinrich, W. (2013):
RF-power GaN transistors with tunable BST pre-matching.
pp. 1-3, Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International, [Conference or Workshop Item]
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2013 |
| Creators: | Bengtsson, O. ; Maune, H. ; Wiens, A. ; Chevtchenko, S. A. ; Jakoby, R. ; Heinrich, W. |
| Title: | RF-power GaN transistors with tunable BST pre-matching |
| Language: | English |
| Uncontrolled Keywords: | III-V semiconductors;barium compounds;gallium compounds;power HEMT;power transistors;strontium compounds;titanium compounds;varactors;wide band gap semiconductors;BST;GaN;RF power transistors;frequency 2 GHz to 3 GHz;gain 20 dB;load pull measurements;power HEMT;size 2 mm;tunable BST prematching;varactor;Assembly;Logic gates;Power generation;Transistors;Tuning;Varactors;Voltage measurement;Adaptive Matching;Ferroelectrics;Gallium Nitride;Power Amplifiers;Tunable Components |
| Divisions: | 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Microwave Engineering 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) |
| Event Title: | Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International |
| Date Deposited: | 08 Dec 2014 13:03 |
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