Radetinac, Aldin ; Mani, Arzhang ; Melnyk, Sergiy ; Nikfalazar, Mohammad ; Ziegler, Jürgen ; Zheng, Yuliang ; Jakoby, Rolf ; Alff, Lambert ; Komissinskiy, Philipp (2014)
Highly conducting SrMoO3 thin films for microwave applications.
In: Applied Physics Letters, 105 (11)
Article
Abstract
We have measured the microwave resistance of highly conducting perovskite oxide SrMoO3 thin film coplanar waveguides. The epitaxial SrMoO3 thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3 nm. Layer-by-layer growth could be achieved for film thicknesses up to 400 nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29 μΩ·cm between 0.1 and 20 GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO3 is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.
Item Type: | Article |
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Erschienen: | 2014 |
Creators: | Radetinac, Aldin ; Mani, Arzhang ; Melnyk, Sergiy ; Nikfalazar, Mohammad ; Ziegler, Jürgen ; Zheng, Yuliang ; Jakoby, Rolf ; Alff, Lambert ; Komissinskiy, Philipp |
Type of entry: | Bibliographie |
Title: | Highly conducting SrMoO3 thin films for microwave applications |
Language: | English |
Date: | 19 September 2014 |
Publisher: | AIP Publishing LLC |
Journal or Publication Title: | Applied Physics Letters |
Volume of the journal: | 105 |
Issue Number: | 11 |
URL / URN: | http://dx.doi.org/10.1063/1.4896339 |
Abstract: | We have measured the microwave resistance of highly conducting perovskite oxide SrMoO3 thin film coplanar waveguides. The epitaxial SrMoO3 thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3 nm. Layer-by-layer growth could be achieved for film thicknesses up to 400 nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29 μΩ·cm between 0.1 and 20 GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO3 is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices. |
Identification Number: | doi:10.1063/1.4896339 |
Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
Date Deposited: | 17 Nov 2014 13:29 |
Last Modified: | 29 Mar 2015 17:39 |
PPN: | |
Funders: | This work was supported by the Deutsche Forschungsgemeinschaft within KO 4093/1-1 and JA 921/31-1. |
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