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Potential distribution in channel of thin-film transistors

Okamura, Koshi ; Hahn, Horst (2012)
Potential distribution in channel of thin-film transistors.
In: Applied Physics Letters, 101 (1)
doi: 10.1063/1.4733290
Article, Bibliographie

Abstract

Channel voltages of ZnO thin-film transistors during operation are precisely probed at two trisecting positions between the source and drain electrode, which exactly corresponds to characteristic transistor events, such as carrier injection, carrier accumulation, pinch-off formation, and drain current saturation. Furthermore, a simple numerical calculation based on the gradual channel approximation and the current continuity equation reveals that the channel voltages have a non-linear potential distribution and an intrinsic but significant potential drop in the region near to the drain electrode in most of the linear regime.

Item Type: Article
Erschienen: 2012
Creators: Okamura, Koshi ; Hahn, Horst
Type of entry: Bibliographie
Title: Potential distribution in channel of thin-film transistors
Language: English
Date: 2012
Publisher: AIP Publishing LLC
Journal or Publication Title: Applied Physics Letters
Volume of the journal: 101
Issue Number: 1
DOI: 10.1063/1.4733290
Abstract:

Channel voltages of ZnO thin-film transistors during operation are precisely probed at two trisecting positions between the source and drain electrode, which exactly corresponds to characteristic transistor events, such as carrier injection, carrier accumulation, pinch-off formation, and drain current saturation. Furthermore, a simple numerical calculation based on the gradual channel approximation and the current continuity equation reveals that the channel voltages have a non-linear potential distribution and an intrinsic but significant potential drop in the region near to the drain electrode in most of the linear regime.

Divisions: 11 Department of Materials and Earth Sciences > Material Science > Joint Research Laboratory Nanomaterials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 17 Jun 2014 11:02
Last Modified: 17 Jun 2014 11:02
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