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Solution-processed oxide semiconductor SnO in p-channel thin-film transistors

Okamura, Koshi ; Nasr, Babak ; Brand, Richard A. ; Hahn, Horst (2012)
Solution-processed oxide semiconductor SnO in p-channel thin-film transistors.
In: Journal of Materials Chemistry, 22 (11)
doi: 10.1039/C2JM16426D
Article, Bibliographie

Abstract

A p-type inorganic oxide semiconductor, tin monoxide (SnO), is developed by a solution process. SnO thin-film transistors (TFTs) in the p-channel enhancement mode are fabricated by spin-coating a precursor solution followed by postannealing, showing a highest field-effect mobility of 0.13 cm2 V−1 s−1, threshold voltage of −1.9 V, and on/off drain current ratio of 85.

Item Type: Article
Erschienen: 2012
Creators: Okamura, Koshi ; Nasr, Babak ; Brand, Richard A. ; Hahn, Horst
Type of entry: Bibliographie
Title: Solution-processed oxide semiconductor SnO in p-channel thin-film transistors
Language: English
Date: 2012
Publisher: Royal Society of Chemistry Publishing
Journal or Publication Title: Journal of Materials Chemistry
Volume of the journal: 22
Issue Number: 11
DOI: 10.1039/C2JM16426D
Abstract:

A p-type inorganic oxide semiconductor, tin monoxide (SnO), is developed by a solution process. SnO thin-film transistors (TFTs) in the p-channel enhancement mode are fabricated by spin-coating a precursor solution followed by postannealing, showing a highest field-effect mobility of 0.13 cm2 V−1 s−1, threshold voltage of −1.9 V, and on/off drain current ratio of 85.

Divisions: 11 Department of Materials and Earth Sciences > Material Science > Joint Research Laboratory Nanomaterials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 16 Jun 2014 12:05
Last Modified: 16 Jun 2014 12:05
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