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Electrically Programmable Bistable Capacitor for High-Frequency Applications Based on Charge Storage at the (Ba,Sr)TiO3/Al2O3 Interface

Li, Shunyi ; Zheng, Yuliang ; Jakoby, Rolf ; Klein, Andreas (2012)
Electrically Programmable Bistable Capacitor for High-Frequency Applications Based on Charge Storage at the (Ba,Sr)TiO3/Al2O3 Interface.
In: Advanced Functional Materials, 22 (22)
doi: 10.1002/adfm.201200405
Article, Bibliographie

Abstract

Hysteresis is induced in paraelectric (Ba,Sr)TiO3 (BST) thin-film capacitors by inserting an Al2O3 barrier layer of a few nanometers in thickness between the BST layer and the electrode. The observed hysteresis is explained by ambipolar charge carrier injection through the Al2O3 layer and charge storage at the BST/Al2O3 interface. The magnitude of the hysteresis can be directly adjusted by manipulating the thickness ratio between BST and Al2O3. Taking into account the low loss of (Ba,Sr)TiO3 capacitors, the observed switching and retention characteristics are suitable for application as non-volatile programmable high-frequency devices, e.g., in radio-frequency identification.

Item Type: Article
Erschienen: 2012
Creators: Li, Shunyi ; Zheng, Yuliang ; Jakoby, Rolf ; Klein, Andreas
Type of entry: Bibliographie
Title: Electrically Programmable Bistable Capacitor for High-Frequency Applications Based on Charge Storage at the (Ba,Sr)TiO3/Al2O3 Interface
Language: English
Date: 21 November 2012
Publisher: WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Journal or Publication Title: Advanced Functional Materials
Volume of the journal: 22
Issue Number: 22
DOI: 10.1002/adfm.201200405
Abstract:

Hysteresis is induced in paraelectric (Ba,Sr)TiO3 (BST) thin-film capacitors by inserting an Al2O3 barrier layer of a few nanometers in thickness between the BST layer and the electrode. The observed hysteresis is explained by ambipolar charge carrier injection through the Al2O3 layer and charge storage at the BST/Al2O3 interface. The magnitude of the hysteresis can be directly adjusted by manipulating the thickness ratio between BST and Al2O3. Taking into account the low loss of (Ba,Sr)TiO3 capacitors, the observed switching and retention characteristics are suitable for application as non-volatile programmable high-frequency devices, e.g., in radio-frequency identification.

Uncontrolled Keywords: (Ba;Sr)TiO3,, steresis, interface charge, non-volatile, tunable high-frequency component
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 29 Nov 2013 08:51
Last Modified: 26 Mar 2015 20:03
PPN:
Funders: This work was supported by the German Science Foundation (DFG) in the framework of the Research Training Group (GRK 1037) on Tunable Integrated Components for Microwaves and Optics, TICMO.
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