Bayer, Thorsten J. M. ; Wachau, André ; Fuchs, Anne ; Deuermeier, Jonas ; Klein, Andreas (2012)
Atomic Layer Deposition of Al2O3 onto Sn-Doped In2O3: Absence of Self-Limited Adsorption during Initial Growth by Oxygen Diffusion from the Substrate and Band Offset Modification by Fermi Level Pinning in Al2O3.
In: Chemistry of Materials, 24 (23)
Article
Abstract
The growth of Al2O3 onto Sn-doped In2O3 (ITO) by atomic layer deposition (ALD) was studied in situ using X-ray photoelectron spectroscopy. Significant diffusion of oxygen from the substrate destroys the self-terminated monolayer adsorption of the metal precursor and results in a nominal initial growth per cycle of >1 nm. The observed mechanism precludes the preparation of monolayer thick Al2O3 films on ITO substrates by ALD. The energy band alignment at the ITO/Al2O3 interface is significantly different from that obtained when magnetron sputtering is used for the deposition of Al2O3 onto ITO [Gassenbauer et al., Phys. Chem. Chem. Phys.2009, 11, 3049]. The difference is attributed to a pinning of the Fermi level in the ALD-Al2O3 layer close to midgap, which is attributed to the incorporation of hydrogen in the film during growth.
| Item Type: | Article |
|---|---|
| Erschienen: | 2012 |
| Creators: | Bayer, Thorsten J. M. ; Wachau, André ; Fuchs, Anne ; Deuermeier, Jonas ; Klein, Andreas |
| Type of entry: | Bibliographie |
| Title: | Atomic Layer Deposition of Al2O3 onto Sn-Doped In2O3: Absence of Self-Limited Adsorption during Initial Growth by Oxygen Diffusion from the Substrate and Band Offset Modification by Fermi Level Pinning in Al2O3 |
| Language: | English |
| Date: | 19 November 2012 |
| Journal or Publication Title: | Chemistry of Materials |
| Volume of the journal: | 24 |
| Issue Number: | 23 |
| URL / URN: | http://dx.doi.org/10.1021/cm301732t |
| Abstract: | The growth of Al2O3 onto Sn-doped In2O3 (ITO) by atomic layer deposition (ALD) was studied in situ using X-ray photoelectron spectroscopy. Significant diffusion of oxygen from the substrate destroys the self-terminated monolayer adsorption of the metal precursor and results in a nominal initial growth per cycle of >1 nm. The observed mechanism precludes the preparation of monolayer thick Al2O3 films on ITO substrates by ALD. The energy band alignment at the ITO/Al2O3 interface is significantly different from that obtained when magnetron sputtering is used for the deposition of Al2O3 onto ITO [Gassenbauer et al., Phys. Chem. Chem. Phys.2009, 11, 3049]. The difference is attributed to a pinning of the Fermi level in the ALD-Al2O3 layer close to midgap, which is attributed to the incorporation of hydrogen in the film during growth. |
| Uncontrolled Keywords: | indium−tin oxide; AL2O3; atomic layer deposition; initial growth; interface properties; band alignment; hydrogen impurity |
| Identification Number: | doi:10.1021/cm301732t |
| Additional Information: | SFB 595 D3 |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes 11 Department of Materials and Earth Sciences > Material Science DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue 11 Department of Materials and Earth Sciences Zentrale Einrichtungen DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres DFG-Collaborative Research Centres (incl. Transregio) |
| Date Deposited: | 16 Aug 2013 12:15 |
| Last Modified: | 25 Mar 2015 22:15 |
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