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{B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n: The First Polyborosilazane Precursor for Silicoboron Carbonitride Stable to 2200 .DEG.C..

Wang, Zhi-Chang ; Gerstel, Peter ; Kaiser, Gerhard ; Kummer, Horst ; Bill, Joachim ; Aldinger, Fritz ; Riedel, Ralf (2001)
{B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n: The First Polyborosilazane Precursor for Silicoboron Carbonitride Stable to 2200 .DEG.C..
In: Chemistry Letters, 30 (4)
doi: 10.1246/cl.2001.296
Article, Bibliographie

Abstract

{B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n was synthesized by base-catalyzed dehydrocoupling reaction of {B[C2H4Si(CH3)NH]3}n with phenylsilane. Pyrolysis of the new polyborosilazane precursor to 1050 °C gave an amorphous material Si3.9B1.0C11N3.2, which could resist thermal degradation to 2200 °C in argon.

Item Type: Article
Erschienen: 2001
Creators: Wang, Zhi-Chang ; Gerstel, Peter ; Kaiser, Gerhard ; Kummer, Horst ; Bill, Joachim ; Aldinger, Fritz ; Riedel, Ralf
Type of entry: Bibliographie
Title: {B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n: The First Polyborosilazane Precursor for Silicoboron Carbonitride Stable to 2200 .DEG.C..
Language: English
Date: 2001
Publisher: Komiyama Printing Co., Ltd
Journal or Publication Title: Chemistry Letters
Volume of the journal: 30
Issue Number: 4
DOI: 10.1246/cl.2001.296
Abstract:

{B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n was synthesized by base-catalyzed dehydrocoupling reaction of {B[C2H4Si(CH3)NH]3}n with phenylsilane. Pyrolysis of the new polyborosilazane precursor to 1050 °C gave an amorphous material Si3.9B1.0C11N3.2, which could resist thermal degradation to 2200 °C in argon.

Divisions: 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 18 May 2012 08:19
Last Modified: 05 Mar 2013 10:00
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