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Influence of Fe-F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films

Paul, F. ; Giere, A. ; Menesklou, W. ; Binder, J. R. ; Scheele, P. ; Jakoby, Rolf ; Haußelt, J. (2008)
Influence of Fe-F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films.
In: International Journal of Materials Research, 99
Article, Bibliographie

Abstract

The influence of Fe acceptor and Fe?F acceptor?donor co-doping on the dielectric response of screen-printed Ba0.6Sr0.4TiO3 thick-films on alumina substrates has been investigated. The Ba0.6Sr0.4TiO3 powders were synthesized by freeze-drying of sols. Permittivity dielectric loss, and tunability were investigated at kHz frequencies with a planar metal-insulator-metal capacitor structure, and at GHz frequencies up to 40 GHz using coplanar waveguide structures. Pure acceptor doping by Fe was found to have a distinct influence on permittivity and dielectric loss-factor at kHz-frequencies and at GHz frequencies due to an internal bias field and pairs of associated defects. Co-doping with F significantly suppresses the influence of the internal bias field and defect-associates at low and microwave frequencies. The commutation quality factor at 10 GHz and E eff

Item Type: Article
Erschienen: 2008
Creators: Paul, F. ; Giere, A. ; Menesklou, W. ; Binder, J. R. ; Scheele, P. ; Jakoby, Rolf ; Haußelt, J.
Type of entry: Bibliographie
Title: Influence of Fe-F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films
Language: English
Date: October 2008
Journal or Publication Title: International Journal of Materials Research
Volume of the journal: 99
Abstract:

The influence of Fe acceptor and Fe?F acceptor?donor co-doping on the dielectric response of screen-printed Ba0.6Sr0.4TiO3 thick-films on alumina substrates has been investigated. The Ba0.6Sr0.4TiO3 powders were synthesized by freeze-drying of sols. Permittivity dielectric loss, and tunability were investigated at kHz frequencies with a planar metal-insulator-metal capacitor structure, and at GHz frequencies up to 40 GHz using coplanar waveguide structures. Pure acceptor doping by Fe was found to have a distinct influence on permittivity and dielectric loss-factor at kHz-frequencies and at GHz frequencies due to an internal bias field and pairs of associated defects. Co-doping with F significantly suppresses the influence of the internal bias field and defect-associates at low and microwave frequencies. The commutation quality factor at 10 GHz and E eff

Divisions: 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Microwave Engineering
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP)
Date Deposited: 27 Jan 2012 15:19
Last Modified: 05 Mar 2013 09:58
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