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Migration of Charged Defects in Local Depolarization Fields as a Mechanism of Aging in Ferroelectrics

Genenko, Yuri A. ; Balke, Nina ; Lupascu, Doru C. (2008):
Migration of Charged Defects in Local Depolarization Fields as a Mechanism of Aging in Ferroelectrics.
In: Ferroelectrics, 370 (1), pp. 196-202. ISSN 0015-0193,
[Article]

Abstract

Quasistatic dielectric relaxation due to migration of charged point defects is considered as a mechanism of aging in ferroelectrics. A two-dimensional model is developed which includes the coupled potential problem and the field-driven diffusion problem. Numerical study reveals formation of space charge zones near the grain boundaries with the only characteristic time of several days being the Maxwell relaxation time defined by the charge carrier density and mobility. The clamping pressure due to charge segregation is about few MPa which corresponds to observed coercive stresses in perovskite ferroelectrics and is significantly stronger than in the mechanisms involving orientational reordering of defect dipoles.

Item Type: Article
Erschienen: 2008
Creators: Genenko, Yuri A. ; Balke, Nina ; Lupascu, Doru C.
Title: Migration of Charged Defects in Local Depolarization Fields as a Mechanism of Aging in Ferroelectrics
Language: English
Abstract:

Quasistatic dielectric relaxation due to migration of charged point defects is considered as a mechanism of aging in ferroelectrics. A two-dimensional model is developed which includes the coupled potential problem and the field-driven diffusion problem. Numerical study reveals formation of space charge zones near the grain boundaries with the only characteristic time of several days being the Maxwell relaxation time defined by the charge carrier density and mobility. The clamping pressure due to charge segregation is about few MPa which corresponds to observed coercive stresses in perovskite ferroelectrics and is significantly stronger than in the mechanisms involving orientational reordering of defect dipoles.

Journal or Publication Title: Ferroelectrics
Volume of the journal: 370
Issue Number: 1
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Nonmetallic-Inorganic Materials
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling > Subproject C5: Phenomenological modelling of injection, transport and recombination in organic semiconducting devices as well as in inorganic ferroelectric materials
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D1: Mesoscopic and macroscopic fatigue in doped ferroelectric ceramics
11 Department of Materials and Earth Sciences > Material Science
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
11 Department of Materials and Earth Sciences
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 17 Aug 2011 13:12
URL / URN: http://dx.doi.org/10.1080/00150190802381563
Additional Information:

SFB 595 Cooperation C5, D1

Identification Number: doi:10.1080/00150190802381563
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