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Deposition of silicon-containing diamond-like carbon films by plasma-enhanced chemical vapour deposition

Baba, Koumei ; Hatada, Ruriko ; Flege, Stefan ; Ensinger, Wolfgang (2009)
Deposition of silicon-containing diamond-like carbon films by plasma-enhanced chemical vapour deposition.
In: Surface and Coatings Technology, 203 (17-18)
Article, Bibliographie

Abstract

Silicon-containing diamond-like carbon (Si-DLC) films were prepared on silicon wafer substrates by DC glow discharge. Acetylene and mixture with tetramethylsilane gases were used as working gases for the plasma. A negative DC voltage was applied to the substrate holder. The DC voltage was changed in the range from − 1 kV to − 4 kV. The surface morphology of the films and the film thickness were observed by scanning electron microscopy. The compositions of the Si-containing DLC films were examined by X-ray photoelectron spectroscopy. The film structure was characterized by Raman spectroscopy. A ball-on-disc test with 2 N load was employed to obtain information about the friction properties and sliding wear resistance of the films. The films were annealed at 723 K, 773 K and 873 K in ambient air for 30 min in order to estimate the thermal stability of the DLC films. The surface roughness of the Si-containing DLC films was very low and no special structure was observed. The deposition rate increased linearly with Si content. The positions of D- and G-bands in Raman spectra decreased with Si content. The integrated intensity ratios ID/IG of the Si-containing DLC films decreased with Si content. A very low friction coefficient of 0.03 was obtained for a 24 at.% Si-containing DLC film. The heat resistivity of DLC films can be improved by Si addition into the DLC films.

Item Type: Article
Erschienen: 2009
Creators: Baba, Koumei ; Hatada, Ruriko ; Flege, Stefan ; Ensinger, Wolfgang
Type of entry: Bibliographie
Title: Deposition of silicon-containing diamond-like carbon films by plasma-enhanced chemical vapour deposition
Language: English
Date: 15 June 2009
Publisher: Elsevier
Journal or Publication Title: Surface and Coatings Technology
Volume of the journal: 203
Issue Number: 17-18
URL / URN: http://www.sciencedirect.com/science/article/B6TVV-4VT0WYP-6...
Abstract:

Silicon-containing diamond-like carbon (Si-DLC) films were prepared on silicon wafer substrates by DC glow discharge. Acetylene and mixture with tetramethylsilane gases were used as working gases for the plasma. A negative DC voltage was applied to the substrate holder. The DC voltage was changed in the range from − 1 kV to − 4 kV. The surface morphology of the films and the film thickness were observed by scanning electron microscopy. The compositions of the Si-containing DLC films were examined by X-ray photoelectron spectroscopy. The film structure was characterized by Raman spectroscopy. A ball-on-disc test with 2 N load was employed to obtain information about the friction properties and sliding wear resistance of the films. The films were annealed at 723 K, 773 K and 873 K in ambient air for 30 min in order to estimate the thermal stability of the DLC films. The surface roughness of the Si-containing DLC films was very low and no special structure was observed. The deposition rate increased linearly with Si content. The positions of D- and G-bands in Raman spectra decreased with Si content. The integrated intensity ratios ID/IG of the Si-containing DLC films decreased with Si content. A very low friction coefficient of 0.03 was obtained for a 24 at.% Si-containing DLC film. The heat resistivity of DLC films can be improved by Si addition into the DLC films.

Uncontrolled Keywords: DLC; Silicon incorporation; Raman spectroscopy; Friction coefficient
Additional Information:

SMMIB-15, 15th International Conference on Surface Modification of Materials by Ion Beams

Divisions: 11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 06 Jul 2009 13:49
Last Modified: 05 Mar 2013 09:20
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