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Carrier and photon dynamics in InAlGaAs/InP MQW laser structures: influence of carrier transport on high-frequency modulation

Hillmer, H. ; Greiner, A. ; Steinhagen, F. ; Lösch, R. ; Schlapp, W. ; Binder, E. ; Kuhn, T. ; Burkhard, H. (1995)
Carrier and photon dynamics in InAlGaAs/InP MQW laser structures: influence of carrier transport on high-frequency modulation.
9th International Conference on Hot Carriers in Semiconductors. Chicago, USA (31.07.-04.08.1995)
doi: 10.1007/978-1-4613-0401-2_133
Conference or Workshop Item, Bibliographie

Abstract

Ultrafast semiconductor laser devices are key components for advanced lightwave transmission systems. Presently, for the third telecommunication window close to 1.55μm mainly InGaAsP/InP distributed feedback (DFB) lasers are investigated and applied. Due to larger technological difficulties, the alternative InAlGaAs/InP material system was by far less studied and used1–8, although this system seems to be superior in many physical points such as band gap discontinuities, carrier quantum well (QW) tunneling, thermal carrier re-emission from QWs, differential gain, gain compression and compositional refractive index variation. We performed detailed experimental and theoretical studies of the carrier and photon dynamics in MQW InAlGaAs/InP laser structures focussing on the influence of carrier transport.

Item Type: Conference or Workshop Item
Erschienen: 1995
Creators: Hillmer, H. ; Greiner, A. ; Steinhagen, F. ; Lösch, R. ; Schlapp, W. ; Binder, E. ; Kuhn, T. ; Burkhard, H.
Type of entry: Bibliographie
Title: Carrier and photon dynamics in InAlGaAs/InP MQW laser structures: influence of carrier transport on high-frequency modulation
Language: English
Date: 1 January 1995
Publisher: Springer
Book Title: Hot Carriers in Semiconductors
Event Title: 9th International Conference on Hot Carriers in Semiconductors
Event Location: Chicago, USA
Event Dates: 31.07.-04.08.1995
DOI: 10.1007/978-1-4613-0401-2_133
Abstract:

Ultrafast semiconductor laser devices are key components for advanced lightwave transmission systems. Presently, for the third telecommunication window close to 1.55μm mainly InGaAsP/InP distributed feedback (DFB) lasers are investigated and applied. Due to larger technological difficulties, the alternative InAlGaAs/InP material system was by far less studied and used1–8, although this system seems to be superior in many physical points such as band gap discontinuities, carrier quantum well (QW) tunneling, thermal carrier re-emission from QWs, differential gain, gain compression and compositional refractive index variation. We performed detailed experimental and theoretical studies of the carrier and photon dynamics in MQW InAlGaAs/InP laser structures focussing on the influence of carrier transport.

Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 19 Nov 2008 15:58
Last Modified: 03 Nov 2022 13:07
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