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Hydride-VPE embedding of InAlGaAs laser structures with Sl InP:Fe

Göbel, R. ; Steinhagen, F. ; Janning, H. (1995)
Hydride-VPE embedding of InAlGaAs laser structures with Sl InP:Fe.
In: Materials Science and Engineering: B, 35 (1-3)
doi: 10.1016/0921-5107(95)01350-4
Article, Bibliographie

Abstract

Hydride vapor phase epitaxy was used to selectively regrow semi-insulating InP:Fe over different InP-based laser mesa structures containing layers of the InAlGaAs material system with Al mol fractions up to 0.48. Although stable Al-containing oxides inhibit the direct epitaxial deposition on the InAlGaAs layer surfaces with high Al contents, the hydride regrowth resulted in voidfree and complete embeddings. The embedding process is presented and the regrowth was proved to be successful by very high speed laser diode operation.

Item Type: Article
Erschienen: 1995
Creators: Göbel, R. ; Steinhagen, F. ; Janning, H.
Type of entry: Bibliographie
Title: Hydride-VPE embedding of InAlGaAs laser structures with Sl InP:Fe
Language: English
Date: 1 December 1995
Publisher: Elsevier
Journal or Publication Title: Materials Science and Engineering: B
Volume of the journal: 35
Issue Number: 1-3
DOI: 10.1016/0921-5107(95)01350-4
Abstract:

Hydride vapor phase epitaxy was used to selectively regrow semi-insulating InP:Fe over different InP-based laser mesa structures containing layers of the InAlGaAs material system with Al mol fractions up to 0.48. Although stable Al-containing oxides inhibit the direct epitaxial deposition on the InAlGaAs layer surfaces with high Al contents, the hydride regrowth resulted in voidfree and complete embeddings. The embedding process is presented and the regrowth was proved to be successful by very high speed laser diode operation.

Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 19 Nov 2008 15:58
Last Modified: 04 Apr 2023 08:18
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