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Formation of thin carbide films of titanium and tantalum by methane plasma immersion ion implantation

Baba, Koumei ; Hatada, Ruriko ; Flege, Stefan ; Kraft, Gunther ; Ensinger, Wolfgang (2007)
Formation of thin carbide films of titanium and tantalum by methane plasma immersion ion implantation.
In: Nuclear Instruments and Methods in Physics Research Section B, 257 (1-2)
Article, Bibliographie

Abstract

Titanium and tantalum samples were treated by high voltage pulses at −20 kV in an atmosphere of methane. The high voltage created a plasma, from which ions of methane and its fragments were accelerated towards the sample and were implanted. Process times between 0.5 and 2 h at a pulse repetition rate of 1 kHz were used. The gas pressure was 1 Pa.

X-ray diffraction results from the near-surface region of the implanted sample showed small peaks of the carbide phases next to dominant peaks of the metal target. Secondary ion mass spectrometry and X-ray photoelectron spectroscopy gave concentration versus depth profiles of the implanted carbon. The chemical shift proved that metal–carbon bonds had been formed. The profiles showed a thin carbon film on top, followed by a shallow implantation profile. The amount of implanted carbon increased with the process time.

Item Type: Article
Erschienen: 2007
Creators: Baba, Koumei ; Hatada, Ruriko ; Flege, Stefan ; Kraft, Gunther ; Ensinger, Wolfgang
Type of entry: Bibliographie
Title: Formation of thin carbide films of titanium and tantalum by methane plasma immersion ion implantation
Language: English
Date: April 2007
Publisher: Elsevier
Journal or Publication Title: Nuclear Instruments and Methods in Physics Research Section B
Volume of the journal: 257
Issue Number: 1-2
Abstract:

Titanium and tantalum samples were treated by high voltage pulses at −20 kV in an atmosphere of methane. The high voltage created a plasma, from which ions of methane and its fragments were accelerated towards the sample and were implanted. Process times between 0.5 and 2 h at a pulse repetition rate of 1 kHz were used. The gas pressure was 1 Pa.

X-ray diffraction results from the near-surface region of the implanted sample showed small peaks of the carbide phases next to dominant peaks of the metal target. Secondary ion mass spectrometry and X-ray photoelectron spectroscopy gave concentration versus depth profiles of the implanted carbon. The chemical shift proved that metal–carbon bonds had been formed. The profiles showed a thin carbon film on top, followed by a shallow implantation profile. The amount of implanted carbon increased with the process time.

Uncontrolled Keywords: 52.77.−j; 52.77.Dq; 81.05.Je; 81.15.−z
Additional Information:

Ion Beam Modification of Materials — Proceedings of the 15th International Conference on Ion Beam Modification of Materials

15th International Conference on Ion Beam Modification of Materials

Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Material Analytics
Date Deposited: 20 Nov 2008 08:28
Last Modified: 20 Feb 2020 13:23
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Funders: The authors would like to thank the Deutsche Forschungsgemeinschaft (DFG) for financial support with the project EN207/19-1.
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