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State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz

Yadav, Rahul ; Ludwig, Florian ; Faridi, Fahd Rushd ; Klopf, J. Michael ; Roskos, Hartmut G. ; Preu, Sascha ; Penirschke, Andreas (2023)
State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz.
In: Sensors, 2023, 23 (7)
doi: 10.26083/tuprints-00023647
Article, Secondary publication, Publisher's Version

Abstract

We present the characterization of a Zero-bias Schottky diode-based Terahertz (THz) detector up to 5.56 THz. The detector was operated with both a table-top system until 1.2 THz and at a Free-Electron Laser (FEL) facility at singular frequencies from 1.9 to 5.56 THz. We used two measurement techniques in order to discriminate the sub-ns-scale (via a 20 GHz oscilloscope) and the ms-scale (using the lock-in technique) responsivity. While the lock-in measurements basically contain all rectification effects, the sub-ns-scale detection with the oscilloscope is not sensitive to slow bolometric effects caused by changes of the IV characteristic due to temperature. The noise equivalent power (NEP) is 10 pW/Hz in the frequency range from 0.2 to 0.6 THz and 17 pW/Hz at 1.2 THz and increases to 0.9 μW/Hz at 5.56 THz, which is at the state of the art for room temperature zero-bias Schottky diode-based THz detectors with non-resonant antennas. The voltage and current responsivity of ∼500 kV/W and ∼100 mA/W, respectively, is demonstrated over a frequency range of 0.2 to 1.2 THz with the table-top system.

Item Type: Article
Erschienen: 2023
Creators: Yadav, Rahul ; Ludwig, Florian ; Faridi, Fahd Rushd ; Klopf, J. Michael ; Roskos, Hartmut G. ; Preu, Sascha ; Penirschke, Andreas
Type of entry: Secondary publication
Title: State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz
Language: English
Date: 2023
Place of Publication: Darmstadt
Year of primary publication: 2023
Publisher: MDPI
Journal or Publication Title: Sensors
Volume of the journal: 23
Issue Number: 7
Collation: 12 Seiten
DOI: 10.26083/tuprints-00023647
URL / URN: https://tuprints.ulb.tu-darmstadt.de/23647
Corresponding Links:
Origin: Secondary publication DeepGreen
Abstract:

We present the characterization of a Zero-bias Schottky diode-based Terahertz (THz) detector up to 5.56 THz. The detector was operated with both a table-top system until 1.2 THz and at a Free-Electron Laser (FEL) facility at singular frequencies from 1.9 to 5.56 THz. We used two measurement techniques in order to discriminate the sub-ns-scale (via a 20 GHz oscilloscope) and the ms-scale (using the lock-in technique) responsivity. While the lock-in measurements basically contain all rectification effects, the sub-ns-scale detection with the oscilloscope is not sensitive to slow bolometric effects caused by changes of the IV characteristic due to temperature. The noise equivalent power (NEP) is 10 pW/Hz in the frequency range from 0.2 to 0.6 THz and 17 pW/Hz at 1.2 THz and increases to 0.9 μW/Hz at 5.56 THz, which is at the state of the art for room temperature zero-bias Schottky diode-based THz detectors with non-resonant antennas. The voltage and current responsivity of ∼500 kV/W and ∼100 mA/W, respectively, is demonstrated over a frequency range of 0.2 to 1.2 THz with the table-top system.

Uncontrolled Keywords: free-electron laser (FEL), broadband detectors, THz sources, THz radiation detectors, zero-bias Schottky diode, room temperature detectors
Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-236478
Additional Information:

This article belongs to the Special Issue Superconductor and Semiconductor-Based Radiation Detectors

Classification DDC: 500 Science and mathematics > 530 Physics
600 Technology, medicine, applied sciences > 620 Engineering and machine engineering
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP)
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Devices and Systems
Date Deposited: 11 Apr 2023 11:44
Last Modified: 13 Apr 2023 14:41
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