Hajo, Ahid S. ; Yilmazoglu, Oktay ; Dadgar, Armin ; Kuppers, Franko ; Kusserow, Thomas (2021):
Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies. (Publisher's Version)
In: IEEE Access, 8, pp. 84116-84122. IEEE Access, e-ISSN 2169-3536,
DOI: 10.26083/tuprints-00017517,
[Article]
Abstract
For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65 A and high current drop of approximately 100 mA for a small ring diode width wd of 1.5µm with 600 nm effective diode height hd at a small threshold voltage of 8.5 V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics.
| Item Type: | Article |
|---|---|
| Erschienen: | 2021 |
| Creators: | Hajo, Ahid S. ; Yilmazoglu, Oktay ; Dadgar, Armin ; Kuppers, Franko ; Kusserow, Thomas |
| Origin: | Secondary publication via sponsored Golden Open Access |
| Status: | Publisher's Version |
| Title: | Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies |
| Language: | English |
| Abstract: | For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65 A and high current drop of approximately 100 mA for a small ring diode width wd of 1.5µm with 600 nm effective diode height hd at a small threshold voltage of 8.5 V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics. |
| Journal or Publication Title: | IEEE Access |
| Volume of the journal: | 8 |
| Publisher: | IEEE Access |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Photonics and Optical Communications 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Devices and Systems 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Systems Technology |
| Date Deposited: | 09 Feb 2021 10:59 |
| DOI: | 10.26083/tuprints-00017517 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/17517 |
| URN: | urn:nbn:de:tuda-tuprints-175171 |
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