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Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition

Büttner, Pascal ; Scheler, Florian ; Pointer, Craig ; Döhler, Dirk ; Barr, Maïssa K. S. ; Koroleva, Aleksandra ; Pankin, Dmitrii ; Hatada, Ruriko ; Flege, Stefan ; Manshina, Alina ; Young, Elizabeth R. ; Mínguez-Bacho, Ignacio ; Bachmann, Julien (2019)
Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition.
In: ACS Applied Energy Materials, 2 (12)
doi: 10.1021/acsaem.9b01721
Article, Bibliographie

Abstract

The combination of oxide and heavier chalcogenide layers in thin film photovoltaics suffers limitations associated with oxygen incorporation and sulfur deficiency in the chalcogenide layer or with a chemical incompatibility which results in dewetting issues and defect states at the interface. Here, we establish atomic layer deposition (ALD) as a tool to overcome these limitations. ALD allows one to obtain highly pure Sb2S3 light absorber layers, and we exploit this technique to generate an additional interfacial layer consisting of 1.5 nm ZnS. This ultrathin layer simultaneously resolves dewetting and passivates defect states at the interface. We demonstrate via transient absorption spectroscopy that interfacial electron recombination is one order of magnitude slower at the ZnS-engineered interface than hole recombination at the Sb2S3/P3HT interface. The comparison of solar cells with and without oxide incorporation in Sb2S3, with and without the ultrathin ZnS interlayer, and with systematically varied Sb2S3 thickness provides a complete picture of the physical processes at work in the devices.

Item Type: Article
Erschienen: 2019
Creators: Büttner, Pascal ; Scheler, Florian ; Pointer, Craig ; Döhler, Dirk ; Barr, Maïssa K. S. ; Koroleva, Aleksandra ; Pankin, Dmitrii ; Hatada, Ruriko ; Flege, Stefan ; Manshina, Alina ; Young, Elizabeth R. ; Mínguez-Bacho, Ignacio ; Bachmann, Julien
Type of entry: Bibliographie
Title: Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition
Language: English
Date: 10 December 2019
Publisher: ACS Publications
Journal or Publication Title: ACS Applied Energy Materials
Volume of the journal: 2
Issue Number: 12
DOI: 10.1021/acsaem.9b01721
URL / URN: https://doi.org/10.1021/acsaem.9b01721
Abstract:

The combination of oxide and heavier chalcogenide layers in thin film photovoltaics suffers limitations associated with oxygen incorporation and sulfur deficiency in the chalcogenide layer or with a chemical incompatibility which results in dewetting issues and defect states at the interface. Here, we establish atomic layer deposition (ALD) as a tool to overcome these limitations. ALD allows one to obtain highly pure Sb2S3 light absorber layers, and we exploit this technique to generate an additional interfacial layer consisting of 1.5 nm ZnS. This ultrathin layer simultaneously resolves dewetting and passivates defect states at the interface. We demonstrate via transient absorption spectroscopy that interfacial electron recombination is one order of magnitude slower at the ZnS-engineered interface than hole recombination at the Sb2S3/P3HT interface. The comparison of solar cells with and without oxide incorporation in Sb2S3, with and without the ultrathin ZnS interlayer, and with systematically varied Sb2S3 thickness provides a complete picture of the physical processes at work in the devices.

Uncontrolled Keywords: atomic layer deposition, extremely thin absorber, antimony sulfide, transient absorption, interfacial layer, ultrathin layer
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Material Analytics
Date Deposited: 14 Feb 2020 10:15
Last Modified: 14 Feb 2020 10:15
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