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Enhanced Responsivity of ZnSe‐Based Metal–Semiconductor–Metal Near‐Ultraviolet Photodetector via Impact Ionization

Sirkeli, Vadim P. and Yilmazoglu, Oktay and Hajo, Ahid S. and Nedeoglo, Natalia D. and Nedeoglo, Dmitrii D. and Preu, Sascha and Küppers, Franko and Hartnagel, Hans L. (2018):
Enhanced Responsivity of ZnSe‐Based Metal–Semiconductor–Metal Near‐Ultraviolet Photodetector via Impact Ionization.
In: physica status solidi (RRL) – Rapid Research Letters, p. 1700418, 12, (2), DOI: 10.1002/pssr.201700418,
[Online-Edition: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssr.2017004...],
[Article]

Abstract

We report on high‐responsivity, fast near‐ultraviolet photodetectors based on bulk ZnSe employing a metal–semiconductor–metal structure with and without interdigital contacts. A very high responsivity of 2.42 and 4.44 A W−1 at 20 V bias voltage and high rejection rate of 7900 and 4810 for the light with a wavelength of 325 nm is obtained for photodetectors without and with interdigital contacts, which indicates an internal gain. The mechanism of internal gain is attributed to the impact ionization of ZnSe atoms under high internal electric field strength of 133 kV cm−1. Also a low dark current of ≈3.4 nA and high detectivity of ≈1.4 × 1011 cm Hz1/2 W−1 at a voltage of 20 V is achieved for the device with interdigital contacts at room temperature.

Item Type: Article
Erschienen: 2018
Creators: Sirkeli, Vadim P. and Yilmazoglu, Oktay and Hajo, Ahid S. and Nedeoglo, Natalia D. and Nedeoglo, Dmitrii D. and Preu, Sascha and Küppers, Franko and Hartnagel, Hans L.
Title: Enhanced Responsivity of ZnSe‐Based Metal–Semiconductor–Metal Near‐Ultraviolet Photodetector via Impact Ionization
Language: English
Abstract:

We report on high‐responsivity, fast near‐ultraviolet photodetectors based on bulk ZnSe employing a metal–semiconductor–metal structure with and without interdigital contacts. A very high responsivity of 2.42 and 4.44 A W−1 at 20 V bias voltage and high rejection rate of 7900 and 4810 for the light with a wavelength of 325 nm is obtained for photodetectors without and with interdigital contacts, which indicates an internal gain. The mechanism of internal gain is attributed to the impact ionization of ZnSe atoms under high internal electric field strength of 133 kV cm−1. Also a low dark current of ≈3.4 nA and high detectivity of ≈1.4 × 1011 cm Hz1/2 W−1 at a voltage of 20 V is achieved for the device with interdigital contacts at room temperature.

Journal or Publication Title: physica status solidi (RRL) – Rapid Research Letters
Volume: 12
Number: 2
Uncontrolled Keywords: impact ionization, metal–semiconductor–metal structures, photodetectors, Schottky diodes, ZnS
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Photonics and Optical Communications
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology
Date Deposited: 04 Apr 2018 09:02
DOI: 10.1002/pssr.201700418
Official URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssr.2017004...
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