Sirkeli, Vadim P. and Yilmazoglu, Oktay and Hajo, Ahid S. and Nedeoglo, Natalia D. and Nedeoglo, Dmitrii D. and Preu, Sascha and Küppers, Franko and Hartnagel, Hans L. (2018):
Enhanced Responsivity of ZnSe‐Based Metal–Semiconductor–Metal Near‐Ultraviolet Photodetector via Impact Ionization.
In: physica status solidi (RRL) – Rapid Research Letters, 12 (2), p. 1700418. DOI: 10.1002/pssr.201700418,
[Article]
Abstract
We report on high‐responsivity, fast near‐ultraviolet photodetectors based on bulk ZnSe employing a metal–semiconductor–metal structure with and without interdigital contacts. A very high responsivity of 2.42 and 4.44 A W−1 at 20 V bias voltage and high rejection rate of 7900 and 4810 for the light with a wavelength of 325 nm is obtained for photodetectors without and with interdigital contacts, which indicates an internal gain. The mechanism of internal gain is attributed to the impact ionization of ZnSe atoms under high internal electric field strength of 133 kV cm−1. Also a low dark current of ≈3.4 nA and high detectivity of ≈1.4 × 1011 cm Hz1/2 W−1 at a voltage of 20 V is achieved for the device with interdigital contacts at room temperature.
| Item Type: | Article |
|---|---|
| Erschienen: | 2018 |
| Creators: | Sirkeli, Vadim P. and Yilmazoglu, Oktay and Hajo, Ahid S. and Nedeoglo, Natalia D. and Nedeoglo, Dmitrii D. and Preu, Sascha and Küppers, Franko and Hartnagel, Hans L. |
| Title: | Enhanced Responsivity of ZnSe‐Based Metal–Semiconductor–Metal Near‐Ultraviolet Photodetector via Impact Ionization |
| Language: | English |
| Abstract: | We report on high‐responsivity, fast near‐ultraviolet photodetectors based on bulk ZnSe employing a metal–semiconductor–metal structure with and without interdigital contacts. A very high responsivity of 2.42 and 4.44 A W−1 at 20 V bias voltage and high rejection rate of 7900 and 4810 for the light with a wavelength of 325 nm is obtained for photodetectors without and with interdigital contacts, which indicates an internal gain. The mechanism of internal gain is attributed to the impact ionization of ZnSe atoms under high internal electric field strength of 133 kV cm−1. Also a low dark current of ≈3.4 nA and high detectivity of ≈1.4 × 1011 cm Hz1/2 W−1 at a voltage of 20 V is achieved for the device with interdigital contacts at room temperature. |
| Journal or Publication Title: | physica status solidi (RRL) – Rapid Research Letters |
| Journal volume: | 12 |
| Number: | 2 |
| Uncontrolled Keywords: | impact ionization, metal–semiconductor–metal structures, photodetectors, Schottky diodes, ZnS |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik 18 Department of Electrical Engineering and Information Technology > Microwave Electronics 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Photonics and Optical Communications 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology |
| Date Deposited: | 04 Apr 2018 09:02 |
| DOI: | 10.1002/pssr.201700418 |
| Official URL: | https://onlinelibrary.wiley.com/doi/abs/10.1002/pssr.2017004... |
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