TU Darmstadt / ULB / TUbiblio

Enhanced Responsivity of ZnSe‐Based Metal–Semiconductor–Metal Near‐Ultraviolet Photodetector via Impact Ionization

Sirkeli, Vadim P. ; Yilmazoglu, Oktay ; Hajo, Ahid S. ; Nedeoglo, Natalia D. ; Nedeoglo, Dmitrii D. ; Preu, Sascha ; Küppers, Franko ; Hartnagel, Hans L. :
Enhanced Responsivity of ZnSe‐Based Metal–Semiconductor–Metal Near‐Ultraviolet Photodetector via Impact Ionization.
[Online-Edition: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssr.2017004...]
In: physica status solidi (RRL) – Rapid Research Letters, 12 (2) p. 1700418.
[Artikel], (2018)

Offizielle URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssr.2017004...

Kurzbeschreibung (Abstract)

We report on high‐responsivity, fast near‐ultraviolet photodetectors based on bulk ZnSe employing a metal–semiconductor–metal structure with and without interdigital contacts. A very high responsivity of 2.42 and 4.44 A W−1 at 20 V bias voltage and high rejection rate of 7900 and 4810 for the light with a wavelength of 325 nm is obtained for photodetectors without and with interdigital contacts, which indicates an internal gain. The mechanism of internal gain is attributed to the impact ionization of ZnSe atoms under high internal electric field strength of 133 kV cm−1. Also a low dark current of ≈3.4 nA and high detectivity of ≈1.4 × 1011 cm Hz1/2 W−1 at a voltage of 20 V is achieved for the device with interdigital contacts at room temperature.

Typ des Eintrags: Artikel
Erschienen: 2018
Autor(en): Sirkeli, Vadim P. ; Yilmazoglu, Oktay ; Hajo, Ahid S. ; Nedeoglo, Natalia D. ; Nedeoglo, Dmitrii D. ; Preu, Sascha ; Küppers, Franko ; Hartnagel, Hans L.
Titel: Enhanced Responsivity of ZnSe‐Based Metal–Semiconductor–Metal Near‐Ultraviolet Photodetector via Impact Ionization
Sprache: Englisch
Kurzbeschreibung (Abstract):

We report on high‐responsivity, fast near‐ultraviolet photodetectors based on bulk ZnSe employing a metal–semiconductor–metal structure with and without interdigital contacts. A very high responsivity of 2.42 and 4.44 A W−1 at 20 V bias voltage and high rejection rate of 7900 and 4810 for the light with a wavelength of 325 nm is obtained for photodetectors without and with interdigital contacts, which indicates an internal gain. The mechanism of internal gain is attributed to the impact ionization of ZnSe atoms under high internal electric field strength of 133 kV cm−1. Also a low dark current of ≈3.4 nA and high detectivity of ≈1.4 × 1011 cm Hz1/2 W−1 at a voltage of 20 V is achieved for the device with interdigital contacts at room temperature.

Titel der Zeitschrift, Zeitung oder Schriftenreihe: physica status solidi (RRL) – Rapid Research Letters
Band: 12
(Heft-)Nummer: 2
Freie Schlagworte: impact ionization, metal–semiconductor–metal structures, photodetectors, Schottky diodes, ZnS
Fachbereich(e)/-gebiet(e): 18 Fachbereich Elektrotechnik und Informationstechnik
18 Fachbereich Elektrotechnik und Informationstechnik > Höchstfrequenzelektronik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik > Photonik und Optische Nachrichtentechnik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik > Terahertz Systems
Hinterlegungsdatum: 04 Apr 2018 09:02
Offizielle URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssr.2017004...
Export:

Optionen (nur für Redakteure)

Eintrag anzeigen Eintrag anzeigen