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Broadband Terahertz Detection with Zero-Bias Field-Effect Transistors between 100 GHz and 11.8 THz with a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz

Regensburger, Stefan ; Mukherjee, Amlan k. ; Schönhuber, Sebastian ; Kainz, Martin A. ; Winnerl, Stephan ; Klopf, J. Michael ; Lu, Hong ; Gossard, Arthur C. ; Unterrainer, Karl ; Preu, Sascha (2018):
Broadband Terahertz Detection with Zero-Bias Field-Effect Transistors between 100 GHz and 11.8 THz with a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz.
In: IEEE Transactions on Terahertz Science and Technology, 8 (4), pp. 465-471. ISSN 2156-342X,
DOI: 10.1109/TTHZ.2018.2843535,
[Article]

Item Type: Article
Erschienen: 2018
Creators: Regensburger, Stefan ; Mukherjee, Amlan k. ; Schönhuber, Sebastian ; Kainz, Martin A. ; Winnerl, Stephan ; Klopf, J. Michael ; Lu, Hong ; Gossard, Arthur C. ; Unterrainer, Karl ; Preu, Sascha
Title: Broadband Terahertz Detection with Zero-Bias Field-Effect Transistors between 100 GHz and 11.8 THz with a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz
Language: English
Journal or Publication Title: IEEE Transactions on Terahertz Science and Technology
Journal volume: 8
Number: 4
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP)
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Devices and Systems
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Systems Technology
Date Deposited: 31 May 2018 16:44
DOI: 10.1109/TTHZ.2018.2843535
Official URL: http://www.tsys.tu-darmstadt.de/Broadband_ZeroBias_FET_THz
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