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Broadband Terahertz Detection with Zero-Bias Field-Effect Transistors between 100 GHz and 11.8 THz with a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz

Regensburger, Stefan and Mukherjee, Amlan k. and Schönhuber, Sebastian and Kainz, Martin A. and Winnerl, Stephan and Klopf, J. Michael and Lu, Hong and Gossard, Arthur C. and Unterrainer, Karl and Preu, Sascha :
Broadband Terahertz Detection with Zero-Bias Field-Effect Transistors between 100 GHz and 11.8 THz with a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz.
[Online-Edition: http://www.tsys.tu-darmstadt.de/Broadband_ZeroBias_FET_THz]
In: IEEE Transactions on Terahertz Science and Technology, 8 (4) pp. 465-471. ISSN 2156-342X
[Article] , (2018)

Official URL: http://www.tsys.tu-darmstadt.de/Broadband_ZeroBias_FET_THz
Item Type: Article
Erschienen: 2018
Creators: Regensburger, Stefan and Mukherjee, Amlan k. and Schönhuber, Sebastian and Kainz, Martin A. and Winnerl, Stephan and Klopf, J. Michael and Lu, Hong and Gossard, Arthur C. and Unterrainer, Karl and Preu, Sascha
Title: Broadband Terahertz Detection with Zero-Bias Field-Effect Transistors between 100 GHz and 11.8 THz with a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz
Language: English
Journal or Publication Title: IEEE Transactions on Terahertz Science and Technology
Volume: 8
Number: 4
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology
Date Deposited: 31 May 2018 16:44
DOI: 10.1109/TTHZ.2018.2843535
Official URL: http://www.tsys.tu-darmstadt.de/Broadband_ZeroBias_FET_THz
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