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Regime of Superfast Atomic Transport and Related Processes in Titanium Alloy Modified by ion Implantation and Cyclic Thermal Treatment

Duvanov, S. M. and Magilin, D. V. and Balogh, A. G. :
Regime of Superfast Atomic Transport and Related Processes in Titanium Alloy Modified by ion Implantation and Cyclic Thermal Treatment.
[Online-Edition: https://doi.org/10.21272/jnep.9(4).04026]
In: Journal of Nano- and Electronic Physics, 9 (4) 04026-1. ISSN 20776772
[Article] , (2017)

Official URL: https://doi.org/10.21272/jnep.9(4).04026

Abstract

In this work we study the formation of a relatively thick TiO2 layer on the surface of Ti-6Al-4V alloy after ion-thermal treatment (IThT). A stoichiometric composition closed to the TiO2 layer, its depth, and local oxidation anisotropy were detected by micro-RBS. Anisotropic oxidation observed at some local areas near the SIMS craters. In this work, a possible mechanism of the oxide layer formation and thermal stability of spherical inclusions size will be discussed in connection with the superfast 18O implant migration and it dissolution at elevated temperatures. It supposed that dielectric spherical inclusions compose from the particles of about few of tenth nanometers in grain size.

Item Type: Article
Erschienen: 2017
Creators: Duvanov, S. M. and Magilin, D. V. and Balogh, A. G.
Title: Regime of Superfast Atomic Transport and Related Processes in Titanium Alloy Modified by ion Implantation and Cyclic Thermal Treatment
Language: English
Abstract:

In this work we study the formation of a relatively thick TiO2 layer on the surface of Ti-6Al-4V alloy after ion-thermal treatment (IThT). A stoichiometric composition closed to the TiO2 layer, its depth, and local oxidation anisotropy were detected by micro-RBS. Anisotropic oxidation observed at some local areas near the SIMS craters. In this work, a possible mechanism of the oxide layer formation and thermal stability of spherical inclusions size will be discussed in connection with the superfast 18O implant migration and it dissolution at elevated temperatures. It supposed that dielectric spherical inclusions compose from the particles of about few of tenth nanometers in grain size.

Journal or Publication Title: Journal of Nano- and Electronic Physics
Volume: 9
Number: 4
Uncontrolled Keywords: Ti-6Al-4V alloy, Ion implantation, Thermal annealing, Oxidation, Diffusion, Nanoparticle, Agglomeration
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 28 Dec 2017 12:11
DOI: 10.21272/jnep.9(4).04026
Official URL: https://doi.org/10.21272/jnep.9(4).04026
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