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Regime of Superfast Atomic Transport and Related Processes in Titanium Alloy Modified by ion Implantation and Cyclic Thermal Treatment

Duvanov, S. M. ; Magilin, D. V. ; Balogh, A. G. (2017)
Regime of Superfast Atomic Transport and Related Processes in Titanium Alloy Modified by ion Implantation and Cyclic Thermal Treatment.
In: Journal of Nano- and Electronic Physics, 9 (4)
doi: 10.21272/jnep.9(4).04026
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

In this work we study the formation of a relatively thick TiO2 layer on the surface of Ti-6Al-4V alloy after ion-thermal treatment (IThT). A stoichiometric composition closed to the TiO2 layer, its depth, and local oxidation anisotropy were detected by micro-RBS. Anisotropic oxidation observed at some local areas near the SIMS craters. In this work, a possible mechanism of the oxide layer formation and thermal stability of spherical inclusions size will be discussed in connection with the superfast 18O implant migration and it dissolution at elevated temperatures. It supposed that dielectric spherical inclusions compose from the particles of about few of tenth nanometers in grain size.

Typ des Eintrags: Artikel
Erschienen: 2017
Autor(en): Duvanov, S. M. ; Magilin, D. V. ; Balogh, A. G.
Art des Eintrags: Bibliographie
Titel: Regime of Superfast Atomic Transport and Related Processes in Titanium Alloy Modified by ion Implantation and Cyclic Thermal Treatment
Sprache: Englisch
Publikationsjahr: 2017
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Nano- and Electronic Physics
Jahrgang/Volume einer Zeitschrift: 9
(Heft-)Nummer: 4
DOI: 10.21272/jnep.9(4).04026
URL / URN: https://doi.org/10.21272/jnep.9(4).04026
Kurzbeschreibung (Abstract):

In this work we study the formation of a relatively thick TiO2 layer on the surface of Ti-6Al-4V alloy after ion-thermal treatment (IThT). A stoichiometric composition closed to the TiO2 layer, its depth, and local oxidation anisotropy were detected by micro-RBS. Anisotropic oxidation observed at some local areas near the SIMS craters. In this work, a possible mechanism of the oxide layer formation and thermal stability of spherical inclusions size will be discussed in connection with the superfast 18O implant migration and it dissolution at elevated temperatures. It supposed that dielectric spherical inclusions compose from the particles of about few of tenth nanometers in grain size.

Freie Schlagworte: Ti-6Al-4V alloy, Ion implantation, Thermal annealing, Oxidation, Diffusion, Nanoparticle, Agglomeration
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 28 Dez 2017 12:11
Letzte Änderung: 28 Dez 2017 12:11
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