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Vertical nanowire contacted THz Schottky detectors based on gallium arsenide for zero-bias operation

Hajo, A. S. and Yilmazoglu, O. and Küppers, F. (2017):
Vertical nanowire contacted THz Schottky detectors based on gallium arsenide for zero-bias operation.
In: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), pp. 1-2, DOI: 10.1109/IRMMW-THz.2017.8067022,
[Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2017
Creators: Hajo, A. S. and Yilmazoglu, O. and Küppers, F.
Title: Vertical nanowire contacted THz Schottky detectors based on gallium arsenide for zero-bias operation
Language: English
Uncontrolled Keywords: III-V semiconductors;Schottky barriers;gallium arsenide;nanowires;semiconductor-metal boundaries;silver;terahertz wave detectors;GaAs-Ag;Schottky diodes;air-bridge contact;gallium arsenide;silver nanowire;terahertz Schottky detectors;vertical nanowire;zero-bias operation;Capacitance;Cutoff frequency;Detectors;Gallium arsenide;Junctions;Schottky barriers;Schottky diodes
Divisions: 18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Photonics and Optical Communications
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
18 Department of Electrical Engineering and Information Technology
Event Title: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Date Deposited: 23 Nov 2017 12:59
DOI: 10.1109/IRMMW-THz.2017.8067022
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