Yi, Min ; Zhang, Hongbin ; Xu, Bai-Xiang (2017)
Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature.
In: npj Computational Materials, 3 (1)
doi: 10.1038/s41524-017-0043-x
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
Voltage-driven 180° magnetization switching without electric current provides the possibility for revolutionizing the spintronics. We demonstrated the voltage-driven charge-mediated 180° magnetization switching at room temperature by combining first-principles calculations and temperature-dependent magnetization dynamics simulation. The electric field (E)-induced interface charge is found to allow a giant modulation of the magnetic anisotropy (K) of the nanomagnet. Particularly K is revealed to vary linearly with respect to E and the epitaxial strain. Magnetization dynamics simulations using the so-obtained K show that both in-plane and perpendicular 180° switching can be achieved by E pulses. The temperature effect renders the 180° switching as probability events. Statistical analysis indicates a fast (around 4 ns) and low-error-probability 180° switching achievable at room temperature by controlling the magnitude of E and the pulse width. The study inspires the rational design of miniaturized nanoscale spintronic devices where thermal fluctuation has a great impact.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2017 |
| Autor(en): | Yi, Min ; Zhang, Hongbin ; Xu, Bai-Xiang |
| Art des Eintrags: | Bibliographie |
| Titel: | Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature |
| Sprache: | Englisch |
| Publikationsjahr: | 22 September 2017 |
| Verlag: | Nature |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | npj Computational Materials |
| Jahrgang/Volume einer Zeitschrift: | 3 |
| (Heft-)Nummer: | 1 |
| DOI: | 10.1038/s41524-017-0043-x |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Voltage-driven 180° magnetization switching without electric current provides the possibility for revolutionizing the spintronics. We demonstrated the voltage-driven charge-mediated 180° magnetization switching at room temperature by combining first-principles calculations and temperature-dependent magnetization dynamics simulation. The electric field (E)-induced interface charge is found to allow a giant modulation of the magnetic anisotropy (K) of the nanomagnet. Particularly K is revealed to vary linearly with respect to E and the epitaxial strain. Magnetization dynamics simulations using the so-obtained K show that both in-plane and perpendicular 180° switching can be achieved by E pulses. The temperature effect renders the 180° switching as probability events. Statistical analysis indicates a fast (around 4 ns) and low-error-probability 180° switching achievable at room temperature by controlling the magnitude of E and the pulse width. The study inspires the rational design of miniaturized nanoscale spintronic devices where thermal fluctuation has a great impact. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Mechanik Funktionaler Materialien 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Theorie magnetischer Materialien |
| Hinterlegungsdatum: | 04 Okt 2017 08:55 |
| Letzte Änderung: | 25 Jul 2024 08:03 |
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Verfügbare Versionen dieses Eintrags
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Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature. (deposited 01 Nov 2017 13:46)
- Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature. (deposited 04 Okt 2017 08:55) [Gegenwärtig angezeigt]
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