Stoesser, Anna ; Seggern, Falk von ; Purohit, Suneeti ; Nasr, Babak ; Kruk, Robert ; Dehm, Simone ; Wang, Di ; Hahn, Horst ; Dasgupta, Subho (2016)
Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors.
In: Nanotechnology, 27 (41)
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Oxide semiconductors are considered to be one of the forefront candidates for the new generation, high-performance electronics. However, one of the major limitations for oxide electronics is the scarcity of an equally good hole-conducting semiconductor, which can provide identical performance for the p-type metal oxide semiconductor field-effect transistors as compared to their electron conducting counterparts. In this quest, here we present a bulk synthesis method for single crystalline cuprous oxide (Cu2O) nanowires, their chemical and morphological characterization and suitability as active channel material in electrolyte-gated, low-power, field-effect transistors (FETs) for portable and flexible logic circuits. The bulk synthesis method used in the present study includes two steps: namely hydrothermal synthesis of the nanowires and the removal of the surface organic contaminants. The surface treated nanowires are then dispersed on a receiver substrate where the passive electrodes are structured, followed by printing of a composite solid polymer electrolyte (CSPE), chosen as the gate insulator. The characteristic electrical properties of individual nanowire FETs are found to be quite interesting including accumulation-mode operation and field-effect mobility of 0.15 cm(2) V-1 s(-1).
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2016 |
| Autor(en): | Stoesser, Anna ; Seggern, Falk von ; Purohit, Suneeti ; Nasr, Babak ; Kruk, Robert ; Dehm, Simone ; Wang, Di ; Hahn, Horst ; Dasgupta, Subho |
| Art des Eintrags: | Bibliographie |
| Titel: | Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors |
| Sprache: | Englisch |
| Publikationsjahr: | 2016 |
| Verlag: | IOP PUBLISHING LTD, England |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nanotechnology |
| Jahrgang/Volume einer Zeitschrift: | 27 |
| (Heft-)Nummer: | 41 |
| URL / URN: | https://doi.org/10.1088/0957-4484/27/41/415205 |
| Kurzbeschreibung (Abstract): | Oxide semiconductors are considered to be one of the forefront candidates for the new generation, high-performance electronics. However, one of the major limitations for oxide electronics is the scarcity of an equally good hole-conducting semiconductor, which can provide identical performance for the p-type metal oxide semiconductor field-effect transistors as compared to their electron conducting counterparts. In this quest, here we present a bulk synthesis method for single crystalline cuprous oxide (Cu2O) nanowires, their chemical and morphological characterization and suitability as active channel material in electrolyte-gated, low-power, field-effect transistors (FETs) for portable and flexible logic circuits. The bulk synthesis method used in the present study includes two steps: namely hydrothermal synthesis of the nanowires and the removal of the surface organic contaminants. The surface treated nanowires are then dispersed on a receiver substrate where the passive electrodes are structured, followed by printing of a composite solid polymer electrolyte (CSPE), chosen as the gate insulator. The characteristic electrical properties of individual nanowire FETs are found to be quite interesting including accumulation-mode operation and field-effect mobility of 0.15 cm(2) V-1 s(-1). |
| Freie Schlagworte: | nanowires, oxide semiconductors, field-effect Transistors, polypyrrole, MOSFETs, copper oxide |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Gemeinschaftslabor Nanomaterialien |
| Hinterlegungsdatum: | 26 Jul 2017 07:52 |
| Letzte Änderung: | 28 Feb 2022 12:32 |
| PPN: | |
| Sponsoren: | The authors would like to acknowledge the financial support from Helmholtz Association in the form of Helmholtz Virtual Institute VI-530. |
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