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Modification of the Schottky Barrier Height at the RuO2 Cathode During Resistance Degradation of Fe-doped SrTiO3

Giesecke, Ruth and Hertwig, Ramis and Bayer, Thorsten J. M. and Randall, Clive A. and Klein, Andreas (2017):
Modification of the Schottky Barrier Height at the RuO2 Cathode During Resistance Degradation of Fe-doped SrTiO3.
100, In: Journal of the American Ceramic Society, (10), pp. 4590-4601. ISSN 00027820,
[Article]

Abstract

The long‐term stability of electronic devices at high temperatures and electric fields might be strongly influenced by the electronic properties of interfaces. A modification of Schottky barrier heights at electrode interfaces of functional oxides upon changes of the external oxygen partial pressure is well documented in literature. In this work, an experimental approach using X‐ray photoelectron spectroscopy is presented, which enables to study transient changes in the Schottky barrier height induced by electrical degradation. A rise of the Fermi level at the RuO2 cathode interface of Fe‐doped SrTiO3 single crystals by 0.6 eV is observed in the course of resistance degradation. The change of the effective barrier height is associated to the migration of oxygen vacancies towards the cathode and accompanied by the observed reduction of Ti. Different scenarios are discussed to explain the origin of barrier modification and the localization of the reduced Ti.

Item Type: Article
Erschienen: 2017
Creators: Giesecke, Ruth and Hertwig, Ramis and Bayer, Thorsten J. M. and Randall, Clive A. and Klein, Andreas
Title: Modification of the Schottky Barrier Height at the RuO2 Cathode During Resistance Degradation of Fe-doped SrTiO3
Language: English
Abstract:

The long‐term stability of electronic devices at high temperatures and electric fields might be strongly influenced by the electronic properties of interfaces. A modification of Schottky barrier heights at electrode interfaces of functional oxides upon changes of the external oxygen partial pressure is well documented in literature. In this work, an experimental approach using X‐ray photoelectron spectroscopy is presented, which enables to study transient changes in the Schottky barrier height induced by electrical degradation. A rise of the Fermi level at the RuO2 cathode interface of Fe‐doped SrTiO3 single crystals by 0.6 eV is observed in the course of resistance degradation. The change of the effective barrier height is associated to the migration of oxygen vacancies towards the cathode and accompanied by the observed reduction of Ti. Different scenarios are discussed to explain the origin of barrier modification and the localization of the reduced Ti.

Journal or Publication Title: Journal of the American Ceramic Society
Volume: 100
Number: 10
Uncontrolled Keywords: degradation, interfaces, strontium titanate, vacancies
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 14 Jun 2017 10:42
Official URL: http://doi.org/10.1111/jace.14962
Identification Number: doi:10.1111/jace.14962
Funders: This work was supported by the U.S. Air Force Office of Scientific Research, Air Force Materiel Command, USAF, under Award Numbers FA9550‐14‐1‐0158 and FA9550‐14‐1‐0067.
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