Radetinac, Aldin ; Ziegler, Jürgen ; Vafaee, Mehran ; Alff, Lambert ; Komissinskiy, Philipp (2017)
Growth and interface engineering in thin-film Ba 0.6 Sr 0.4 TiO 3 / SrMoO 3 heterostructures.
In: Journal of Crystal Growth, 463
doi: 10.1016/j.jcrysgro.2017.02.015
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Epitaxial heterostructures of ferroelectric Ba0.6Sr0.4TiO3Ba0.6Sr0.4TiO3 and highly conducting SrMoO3SrMoO3 were grown by pulsed laser deposition on SrTiO3SrTiO3 (0 0 1) substrates. Surface oxidation of the SrMoO3SrMoO3 film is suppressed using a thin cap interlayer of Ba0.6Sr0.4TiO3-δBa0.6Sr0.4TiO3-δ grown in reduced atmosphere. As shown by X-ray photoelectron spectroscopy, the Mo4+Mo4+ valence state of the SrMoO3SrMoO3 films is stable upon annealing of the sample in oxygen up to 600 °C. The described oxygen interface engineering enables utilization of the highly conducting material SrMoO3SrMoO3 in multilayer oxide ferroelectric varactors.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2017 |
Autor(en): | Radetinac, Aldin ; Ziegler, Jürgen ; Vafaee, Mehran ; Alff, Lambert ; Komissinskiy, Philipp |
Art des Eintrags: | Bibliographie |
Titel: | Growth and interface engineering in thin-film Ba 0.6 Sr 0.4 TiO 3 / SrMoO 3 heterostructures |
Sprache: | Englisch |
Publikationsjahr: | 1 April 2017 |
Verlag: | Elsevier Science Publishing |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Crystal Growth |
Jahrgang/Volume einer Zeitschrift: | 463 |
DOI: | 10.1016/j.jcrysgro.2017.02.015 |
Kurzbeschreibung (Abstract): | Epitaxial heterostructures of ferroelectric Ba0.6Sr0.4TiO3Ba0.6Sr0.4TiO3 and highly conducting SrMoO3SrMoO3 were grown by pulsed laser deposition on SrTiO3SrTiO3 (0 0 1) substrates. Surface oxidation of the SrMoO3SrMoO3 film is suppressed using a thin cap interlayer of Ba0.6Sr0.4TiO3-δBa0.6Sr0.4TiO3-δ grown in reduced atmosphere. As shown by X-ray photoelectron spectroscopy, the Mo4+Mo4+ valence state of the SrMoO3SrMoO3 films is stable upon annealing of the sample in oxygen up to 600 °C. The described oxygen interface engineering enables utilization of the highly conducting material SrMoO3SrMoO3 in multilayer oxide ferroelectric varactors. |
Freie Schlagworte: | A1. Surfaces, A1. Interfaces, A3. Laser epitaxy, A3. Heterostrostructures, B1. Perovskite oxides |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
Hinterlegungsdatum: | 19 Mai 2017 09:19 |
Letzte Änderung: | 19 Mai 2017 09:19 |
PPN: | |
Sponsoren: | This work was supported by the DFG projects GRK 1037 (TICMO) and KO 4093/1. |
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