Barragan-Yani, Daniel ; Albe, Karsten (2017)
Atomic and electronic structure of perfect dislocations in the solar absorber materials CuInSe_2 and CuGaSe_2 studied by first-principles calculations.
In: Physical Review B, 95 (11)
doi: 10.1103/PhysRevB.95.115203
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Structural and electronic properties of screw and 60◦-mixed glide and shuffle dislocations in the solar absorber materials CuInSe_2 and CuGaSe_2 are investigated by means of electronic structure calculations within density functional theory (DFT). Screw dislocations present distorted bonds but remain fully coordinated after structural relaxation. Relaxed 60◦-mixed dislocations, in contrast, exhibit dangling and “wrong,” cation-cation or anionanion bonds, which induce deep charge transition levels and are electrically active. Analysis of Bader charges and local density of states (LDOS) reveals that acceptor and donor levels are induced by α and β cores, respectively. Moreover, there is local charge accumulation in the surrounding of those cores which contain dangling or “wrong” bonds. Thus the apparently harmless nature of dislocations is not because they are electrically inactive, but can only be a result of passivation by segregating defects.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2017 |
| Autor(en): | Barragan-Yani, Daniel ; Albe, Karsten |
| Art des Eintrags: | Bibliographie |
| Titel: | Atomic and electronic structure of perfect dislocations in the solar absorber materials CuInSe_2 and CuGaSe_2 studied by first-principles calculations |
| Sprache: | Englisch |
| Publikationsjahr: | 7 März 2017 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical Review B |
| Jahrgang/Volume einer Zeitschrift: | 95 |
| (Heft-)Nummer: | 11 |
| DOI: | 10.1103/PhysRevB.95.115203 |
| Kurzbeschreibung (Abstract): | Structural and electronic properties of screw and 60◦-mixed glide and shuffle dislocations in the solar absorber materials CuInSe_2 and CuGaSe_2 are investigated by means of electronic structure calculations within density functional theory (DFT). Screw dislocations present distorted bonds but remain fully coordinated after structural relaxation. Relaxed 60◦-mixed dislocations, in contrast, exhibit dangling and “wrong,” cation-cation or anionanion bonds, which induce deep charge transition levels and are electrically active. Analysis of Bader charges and local density of states (LDOS) reveals that acceptor and donor levels are induced by α and β cores, respectively. Moreover, there is local charge accumulation in the surrounding of those cores which contain dangling or “wrong” bonds. Thus the apparently harmless nature of dislocations is not because they are electrically inactive, but can only be a result of passivation by segregating defects. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialmodellierung Zentrale Einrichtungen > Hochschulrechenzentrum (HRZ) > Hochleistungsrechner 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft Zentrale Einrichtungen > Hochschulrechenzentrum (HRZ) 11 Fachbereich Material- und Geowissenschaften Zentrale Einrichtungen |
| Hinterlegungsdatum: | 15 Mai 2017 12:04 |
| Letzte Änderung: | 16 Mai 2017 07:08 |
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