Keil, Peter ; Frömling, Till ; Klein, Andreas ; Rödel, Jürgen ; Novak, Nikola (2017)
Piezotronic effect at Schottky barrier of a metal-ZnO single crystal interface.
In: Journal of Applied Physics, 121
doi: 10.1063/1.4981243
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
ZnO is considered as one of the most promising semiconductor materials for future applications based on the piezotronic effect. Intense studies on ZnO nanowires had been carried out to understand the modulation of the Schottky barrier height at the metal ZnO interface via piezoelectricity. However, an experimental investigation on bulk ZnO single crystals and a fundamental comparison of the modification of the barrier height determined experimentally and theoretically are still missing. Therefore, an adjustment of the electrostatic potential barrier height at metal-ZnO single crystal interfaces due to stress induced piezoelectric charges was conducted, using both O- and Zn-terminated surfaces. In-situ stress dependent impedance and current-voltage measurements were utilized to extract the electrical properties of the potential barrier and to determine the reduction of the barrier height. The decrease of the interface resistance and increase of the capacitance reveal the presence of stress induced piezoelectric charges. The experimentally evaluated reduction of the barrier height reveals a moderate change of about 9meV at 70 MPa and supports prior work on metal-ZnO nanowires. This change was found to be in good agreement with theoretical calculations based on the imperfect screening model if a thickness of the interface layer is assumed to be �2 A˚ . Published by AIP Publishing.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2017 |
| Autor(en): | Keil, Peter ; Frömling, Till ; Klein, Andreas ; Rödel, Jürgen ; Novak, Nikola |
| Art des Eintrags: | Bibliographie |
| Titel: | Piezotronic effect at Schottky barrier of a metal-ZnO single crystal interface |
| Sprache: | Englisch |
| Publikationsjahr: | 24 April 2017 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 121 |
| DOI: | 10.1063/1.4981243 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | ZnO is considered as one of the most promising semiconductor materials for future applications based on the piezotronic effect. Intense studies on ZnO nanowires had been carried out to understand the modulation of the Schottky barrier height at the metal ZnO interface via piezoelectricity. However, an experimental investigation on bulk ZnO single crystals and a fundamental comparison of the modification of the barrier height determined experimentally and theoretically are still missing. Therefore, an adjustment of the electrostatic potential barrier height at metal-ZnO single crystal interfaces due to stress induced piezoelectric charges was conducted, using both O- and Zn-terminated surfaces. In-situ stress dependent impedance and current-voltage measurements were utilized to extract the electrical properties of the potential barrier and to determine the reduction of the barrier height. The decrease of the interface resistance and increase of the capacitance reveal the presence of stress induced piezoelectric charges. The experimentally evaluated reduction of the barrier height reveals a moderate change of about 9meV at 70 MPa and supports prior work on metal-ZnO nanowires. This change was found to be in good agreement with theoretical calculations based on the imperfect screening model if a thickness of the interface layer is assumed to be �2 A˚ . Published by AIP Publishing. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 24 Apr 2017 10:44 |
| Letzte Änderung: | 03 Jul 2024 02:27 |
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Verfügbare Versionen dieses Eintrags
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Piezotronic effect at Schottky barrier of a metal-ZnO single crystal interface. (deposited 18 Nov 2021 10:43)
- Piezotronic effect at Schottky barrier of a metal-ZnO single crystal interface. (deposited 24 Apr 2017 10:44) [Gegenwärtig angezeigt]
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