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Gauge factors for piezotronic stress sensor in polycrystalline ZnO

Keil, Peter ; Baraki, Raschid ; Novak, Nikola ; Rödel, Jürgen ; Frömling, Till (2017)
Gauge factors for piezotronic stress sensor in polycrystalline ZnO.
In: Journal of Physics D: Applied Physics, 50 (17)
doi: 10.1088/1361-6463/aa65f6
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The piezotronic effect gained considerable interest during the last decade. It utilizes the interaction of stress-induced piezoelectric charges and the electronic band structure in piezoelectric semiconductors. This could lead to new applications like strain-triggered transistors or transparent strain/stress sensors. Apart from single Schottky barriers, double Schottky barriers in varistor boundaries in ZnO can be modified extensively by the application of stress. The gauge factors obtained by this method far exceed values for commercial strain sensors. The determination of the underlying physical mechanisms is therefore of utmost importance for applications in strain sensing. In this work, the experimental results of the influence of mechanical stress on the current–voltage characteristics of ZnO-based varistor ceramics are contrasted to simulations. It is verified that a recently introduced simplified physical model based on parallel conductive regions is capable of explaining the stress sensitivity of varistor ceramics and the evolution of the gauge factor as a function of mechanical stress. At electric fields below the breakdown voltage, small percolating pathways through the microstructure determine the current response of the ceramic. This current localization effect becomes even more pronounced when the material is mechanically stressed with an externally applied uniaxial compressive load. Considering application in stress sensors, current localization in the material could possibly lead to local heating effects and degradation of the material.

Typ des Eintrags: Artikel
Erschienen: 2017
Autor(en): Keil, Peter ; Baraki, Raschid ; Novak, Nikola ; Rödel, Jürgen ; Frömling, Till
Art des Eintrags: Bibliographie
Titel: Gauge factors for piezotronic stress sensor in polycrystalline ZnO
Sprache: Englisch
Publikationsjahr: 4 April 2017
Verlag: IOP Publishing
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Physics D: Applied Physics
Jahrgang/Volume einer Zeitschrift: 50
(Heft-)Nummer: 17
DOI: 10.1088/1361-6463/aa65f6
Kurzbeschreibung (Abstract):

The piezotronic effect gained considerable interest during the last decade. It utilizes the interaction of stress-induced piezoelectric charges and the electronic band structure in piezoelectric semiconductors. This could lead to new applications like strain-triggered transistors or transparent strain/stress sensors. Apart from single Schottky barriers, double Schottky barriers in varistor boundaries in ZnO can be modified extensively by the application of stress. The gauge factors obtained by this method far exceed values for commercial strain sensors. The determination of the underlying physical mechanisms is therefore of utmost importance for applications in strain sensing. In this work, the experimental results of the influence of mechanical stress on the current–voltage characteristics of ZnO-based varistor ceramics are contrasted to simulations. It is verified that a recently introduced simplified physical model based on parallel conductive regions is capable of explaining the stress sensitivity of varistor ceramics and the evolution of the gauge factor as a function of mechanical stress. At electric fields below the breakdown voltage, small percolating pathways through the microstructure determine the current response of the ceramic. This current localization effect becomes even more pronounced when the material is mechanically stressed with an externally applied uniaxial compressive load. Considering application in stress sensors, current localization in the material could possibly lead to local heating effects and degradation of the material.

Freie Schlagworte: piezotronics, stress sensitivity, ZnO-based varistor
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 11 Apr 2017 12:28
Letzte Änderung: 11 Apr 2017 12:28
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