Mundt, Paul ; Vogel, Stefan ; Bonrad, Klaus ; Seggern, Heinz von (2016)
InverseI–VInjection Characteristics of ZnO Nanoparticle-Based Diodes.
In: ACS Applied Materials & Interfaces, 8 (31)
doi: 10.1021/acsami.6b04193
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Simple Al/ZnO(NP)/Au diodes produced by spin coating of ZnO nanoparticle dispersions (ZnO(NP)) on Al/Al2O3 and Au substrates and subsequent Au deposition have been investigated to understand electron injection properties of more complex devices, incorporating ZnO(NP) as injection layer. Inverse I-V characteristics have been observed compared to conventional Al/ZnO(SP)/Au diodes produced by reactive ion sputtering of ZnO. SEM micrographs reveal that the void-containing contact of ZnO(NP) with the bottom Al electrode and the rough morphology of the top Au electrode are likely to be responsible for the observed injection and ejection probabilities of electrons. A simple tunneling model, incorporating the voids, explains the strongly reduced injection currents from Al whereas the top electrode fabricated by vapor deposition of Au onto the nanoparticle topology adopts the inverse ZnO(NP) morphology leading to enlarged injection areas combined with Au-tip landscapes. These tips in contrast to the smooth sputtered ZnO(SP) lead to electric field enhancement and strongly increased injection of electrons in reverse direction. The injected charge piles up at the barrier generated by voids between ZnO(NP) and the bottom electrode forcing a change in the barrier shape and therefore allowing for higher ejection rates. Both effects in combination explain the inverse I-V characteristic of nanoparticle based diodes.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2016 |
Autor(en): | Mundt, Paul ; Vogel, Stefan ; Bonrad, Klaus ; Seggern, Heinz von |
Art des Eintrags: | Bibliographie |
Titel: | InverseI–VInjection Characteristics of ZnO Nanoparticle-Based Diodes |
Sprache: | Englisch |
Publikationsjahr: | 10 August 2016 |
Verlag: | AMER CHEMICAL SOC, NW, WASHINGTON, DC, USA |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | ACS Applied Materials & Interfaces |
Jahrgang/Volume einer Zeitschrift: | 8 |
(Heft-)Nummer: | 31 |
DOI: | 10.1021/acsami.6b04193 |
Kurzbeschreibung (Abstract): | Simple Al/ZnO(NP)/Au diodes produced by spin coating of ZnO nanoparticle dispersions (ZnO(NP)) on Al/Al2O3 and Au substrates and subsequent Au deposition have been investigated to understand electron injection properties of more complex devices, incorporating ZnO(NP) as injection layer. Inverse I-V characteristics have been observed compared to conventional Al/ZnO(SP)/Au diodes produced by reactive ion sputtering of ZnO. SEM micrographs reveal that the void-containing contact of ZnO(NP) with the bottom Al electrode and the rough morphology of the top Au electrode are likely to be responsible for the observed injection and ejection probabilities of electrons. A simple tunneling model, incorporating the voids, explains the strongly reduced injection currents from Al whereas the top electrode fabricated by vapor deposition of Au onto the nanoparticle topology adopts the inverse ZnO(NP) morphology leading to enlarged injection areas combined with Au-tip landscapes. These tips in contrast to the smooth sputtered ZnO(SP) lead to electric field enhancement and strongly increased injection of electrons in reverse direction. The injected charge piles up at the barrier generated by voids between ZnO(NP) and the bottom electrode forcing a change in the barrier shape and therefore allowing for higher ejection rates. Both effects in combination explain the inverse I-V characteristic of nanoparticle based diodes. |
Freie Schlagworte: | metal oxides, ZnO, nanoparticles, inverse I-V, diode; tip injection, tunneling |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Elektronische Materialeigenschaften |
Hinterlegungsdatum: | 18 Nov 2016 11:52 |
Letzte Änderung: | 13 Aug 2021 14:08 |
PPN: | |
Sponsoren: | Paul Mundt received funding from the Merck KGaA and the Helmholtz Virtual Institute (VH-VI-530). Klaus Bonrad received funding from Merck KGaA. |
Export: | |
Suche nach Titel in: | TUfind oder in Google |
Frage zum Eintrag |
Optionen (nur für Redakteure)
Redaktionelle Details anzeigen |