Sykora, Benedikt ; Wang, Di ; Seggern, Heinz von (2016)
Multiple ink-jet printed zinc tin oxide layers with improved TFT performance.
In: Applied Physics Letters, 109 (3)
doi: 10.1063/1.4958701
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
In the last two decades, metal-oxides, like zinc tin oxide (ZTO), are widely studied semiconductors for transistor applications. This study presents a simple, non-toxic, stable, and cost efficient precursor route for ZTO deposition by ink-jet printing. Such fabricated thin films are composed of an amorphous phase with embedded ZnO nanocrystals. The saturation mobility of ink-jet printed transistors increases from 0.05 cm(2) V-1 s(-1) for a single semiconducting layer to 7.8 cm(2) V-1 s(-1) for a transistor composed of 8 layers. This constitutes the highest saturation mobility of an ink-jet printed ZTO transistor reported so far. The devices exhibit large output currents (up to 38.7 mA) and high on/off ratios (exceeding 10 8). The large improvement in transistor performance with the number of layers is ascribed to an improved degree of substrate coverage confirmed by AFM investigations. Published by AIP Publishing.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2016 |
| Autor(en): | Sykora, Benedikt ; Wang, Di ; Seggern, Heinz von |
| Art des Eintrags: | Bibliographie |
| Titel: | Multiple ink-jet printed zinc tin oxide layers with improved TFT performance |
| Sprache: | Englisch |
| Publikationsjahr: | 18 Juli 2016 |
| Verlag: | AIP Publishing, Melville, NY, USA |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 109 |
| (Heft-)Nummer: | 3 |
| DOI: | 10.1063/1.4958701 |
| Kurzbeschreibung (Abstract): | In the last two decades, metal-oxides, like zinc tin oxide (ZTO), are widely studied semiconductors for transistor applications. This study presents a simple, non-toxic, stable, and cost efficient precursor route for ZTO deposition by ink-jet printing. Such fabricated thin films are composed of an amorphous phase with embedded ZnO nanocrystals. The saturation mobility of ink-jet printed transistors increases from 0.05 cm(2) V-1 s(-1) for a single semiconducting layer to 7.8 cm(2) V-1 s(-1) for a transistor composed of 8 layers. This constitutes the highest saturation mobility of an ink-jet printed ZTO transistor reported so far. The devices exhibit large output currents (up to 38.7 mA) and high on/off ratios (exceeding 10 8). The large improvement in transistor performance with the number of layers is ascribed to an improved degree of substrate coverage confirmed by AFM investigations. Published by AIP Publishing. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Elektronische Materialeigenschaften |
| Hinterlegungsdatum: | 18 Nov 2016 11:42 |
| Letzte Änderung: | 13 Aug 2021 14:08 |
| PPN: | |
| Sponsoren: | This work was funded by the Helmholtz Association through the Helmholtz Virtual Institute VI-530. |
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