Hoyer, Karoline L. ; Hubmann, Andreas H. ; Klein, Andreas (2017)
Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In2O3thin films.
In: physica status solidi (a), 214 (2)
doi: 10.1002/pssa.201600486
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Ge-doped inline image thin films prepared by magnetron sputtering are studied using photoelectron spectroscopy and Hall effect measurements. Carrier conductivities of up to inline image and carrier mobilities of up to inline image are observed. The surface Ge concentration is enhanced by a factor of 2–3 compared to the concentration in the interior of the films. The surface Ge concentration increases with more oxidizing deposition conditions, in opposite to what has been reported for Sn-doped inline image. Ge-doped inline image films exhibit higher work functions as compared to Sn-doped films, in particular at oxidizing conditions. This is attributed to the formation of a inline image surface phase. While segregation of Sn reduces the carrier mobility due to grain boundary scattering, Ge segregation does not show such an effect. The differences are attributed to the different oxidation states of the segregated dopants, in agreement with the observed dependence of segregation on oxygen activity.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2017 |
| Autor(en): | Hoyer, Karoline L. ; Hubmann, Andreas H. ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In2O3thin films |
| Sprache: | Englisch |
| Publikationsjahr: | 1 Februar 2017 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | physica status solidi (a) |
| Jahrgang/Volume einer Zeitschrift: | 214 |
| (Heft-)Nummer: | 2 |
| DOI: | 10.1002/pssa.201600486 |
| Kurzbeschreibung (Abstract): | Ge-doped inline image thin films prepared by magnetron sputtering are studied using photoelectron spectroscopy and Hall effect measurements. Carrier conductivities of up to inline image and carrier mobilities of up to inline image are observed. The surface Ge concentration is enhanced by a factor of 2–3 compared to the concentration in the interior of the films. The surface Ge concentration increases with more oxidizing deposition conditions, in opposite to what has been reported for Sn-doped inline image. Ge-doped inline image films exhibit higher work functions as compared to Sn-doped films, in particular at oxidizing conditions. This is attributed to the formation of a inline image surface phase. While segregation of Sn reduces the carrier mobility due to grain boundary scattering, Ge segregation does not show such an effect. The differences are attributed to the different oxidation states of the segregated dopants, in agreement with the observed dependence of segregation on oxygen activity. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 17 Okt 2016 14:01 |
| Letzte Änderung: | 01 Mär 2017 18:15 |
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