Hatada, Ruriko ; Baba, Koumei ; Flege, Stefan ; Ensinger, Wolfgang (2016)
Long-term thermal stability of Si-containing diamond-like carbon films prepared by plasma source ion implantation.
In: Surface and Coatings Technology, 305
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The long-term stability of silicon-containing diamond-like carbon films was investigated. The samples were prepared by plasma source ion implantation with a mixture of tetramethylsilane (TMS) and acetylene (C2H2) using negative high voltage pulses. The film composition was changed by varying the flow rates of the TMS and C2H2 gases, resulting in a Si content from 0 to 44 at.%. After deposition the films were annealed at temperatures from 523 K to 773 K for 168 h in ambient air. The effect of the Si content on the structure, the mechanical and tribological properties of the DLC films was investigated. A silicon oxide layer is produced on the surface of the film which improves the thermal stability. Mechanical and friction characteristics of the Si-DLC were not much affected by the long-term thermal annealing if the temperature was kept below 573 K.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2016 |
| Autor(en): | Hatada, Ruriko ; Baba, Koumei ; Flege, Stefan ; Ensinger, Wolfgang |
| Art des Eintrags: | Bibliographie |
| Titel: | Long-term thermal stability of Si-containing diamond-like carbon films prepared by plasma source ion implantation |
| Sprache: | Englisch |
| Publikationsjahr: | November 2016 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Surface and Coatings Technology |
| Jahrgang/Volume einer Zeitschrift: | 305 |
| URL / URN: | http://www.sciencedirect.com/science/article/pii/S0257897216... |
| Kurzbeschreibung (Abstract): | The long-term stability of silicon-containing diamond-like carbon films was investigated. The samples were prepared by plasma source ion implantation with a mixture of tetramethylsilane (TMS) and acetylene (C2H2) using negative high voltage pulses. The film composition was changed by varying the flow rates of the TMS and C2H2 gases, resulting in a Si content from 0 to 44 at.%. After deposition the films were annealed at temperatures from 523 K to 773 K for 168 h in ambient air. The effect of the Si content on the structure, the mechanical and tribological properties of the DLC films was investigated. A silicon oxide layer is produced on the surface of the film which improves the thermal stability. Mechanical and friction characteristics of the Si-DLC were not much affected by the long-term thermal annealing if the temperature was kept below 573 K. |
| Freie Schlagworte: | DLC, Friction coefficient, PSII, Silicon incorporation, Thermal stability |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 20 Sep 2016 05:39 |
| Letzte Änderung: | 20 Sep 2016 05:39 |
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