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PACVD derived thin films in the system Si-B-C-N

Hegemann, Dirk ; Riedel, R. ; Oehr, C. :
PACVD derived thin films in the system Si-B-C-N.
In: Chemical vapor deposition, 5 (2) pp. 61-65.
[Artikel], (1999)

Kurzbeschreibung (Abstract)

PACVD has been used to obtain SiBCN thin films for the first time at low temperatures (250 °C) from a single-source precursor. In comparison with PACVD BCN, the B:C ratio is the same, but there is a slightly increased N content, and the presence of Si improves the hardness and adhesion characteristics. XPS and FTIR results suggest that most Si atoms are bonded to N and C, with the C being mainly sp2/sp3 hybridized C[BOND]C and C[BOND]N bonds, while B is bonded to N, also with sp2/sp3 hybridization.

Typ des Eintrags: Artikel
Erschienen: 1999
Autor(en): Hegemann, Dirk ; Riedel, R. ; Oehr, C.
Titel: PACVD derived thin films in the system Si-B-C-N
Sprache: Englisch
Kurzbeschreibung (Abstract):

PACVD has been used to obtain SiBCN thin films for the first time at low temperatures (250 °C) from a single-source precursor. In comparison with PACVD BCN, the B:C ratio is the same, but there is a slightly increased N content, and the presence of Si improves the hardness and adhesion characteristics. XPS and FTIR results suggest that most Si atoms are bonded to N and C, with the C being mainly sp2/sp3 hybridized C[BOND]C and C[BOND]N bonds, while B is bonded to N, also with sp2/sp3 hybridization.

Titel der Zeitschrift, Zeitung oder Schriftenreihe: Chemical vapor deposition
Band: 5
(Heft-)Nummer: 2
Verlag: Wiley
Fachbereich(e)/-gebiet(e): Fachbereich Material- und Geowissenschaften > Materialwissenschaften > Disperse Feststoffe, Dispersive Solids
Fachbereich Material- und Geowissenschaften > Materialwissenschaften
Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 19 Nov 2008 16:04
Sponsoren: We thank the Fonds der Chemischen Industrie, Frankfurt, for financial support.
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