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PACVD derived thin films in the system Si-B-C-N

Hegemann, Dirk and Riedel, R. and Oehr, C. (1999):
PACVD derived thin films in the system Si-B-C-N.
5, In: Chemical vapor deposition, (2), Wiley, pp. 61-65, [Article]

Abstract

PACVD has been used to obtain SiBCN thin films for the first time at low temperatures (250 °C) from a single-source precursor. In comparison with PACVD BCN, the B:C ratio is the same, but there is a slightly increased N content, and the presence of Si improves the hardness and adhesion characteristics. XPS and FTIR results suggest that most Si atoms are bonded to N and C, with the C being mainly sp2/sp3 hybridized C[BOND]C and C[BOND]N bonds, while B is bonded to N, also with sp2/sp3 hybridization.

Item Type: Article
Erschienen: 1999
Creators: Hegemann, Dirk and Riedel, R. and Oehr, C.
Title: PACVD derived thin films in the system Si-B-C-N
Language: English
Abstract:

PACVD has been used to obtain SiBCN thin films for the first time at low temperatures (250 °C) from a single-source precursor. In comparison with PACVD BCN, the B:C ratio is the same, but there is a slightly increased N content, and the presence of Si improves the hardness and adhesion characteristics. XPS and FTIR results suggest that most Si atoms are bonded to N and C, with the C being mainly sp2/sp3 hybridized C[BOND]C and C[BOND]N bonds, while B is bonded to N, also with sp2/sp3 hybridization.

Journal or Publication Title: Chemical vapor deposition
Volume: 5
Number: 2
Publisher: Wiley
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 19 Nov 2008 16:04
Funders: We thank the Fonds der Chemischen Industrie, Frankfurt, for financial support.
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