Siol, Sebastian ; Hellmann, Jan C. ; Tilley, S. David ; Graetzel, Michael ; Morasch, Jan ; Deuermeier, Jonas ; Jaegermann, Wolfram ; Klein, Andreas (2016)
Band Alignment Engineering at Cu2O/ZnO Heterointerfaces.
In: ACS Applied Materials & Interfaces, 8 (33)
doi: 10.1021/acsami.6b07325
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Energy band alignments at heterointerfaces play a crucial role in defining the functionality of semiconductor devices, yet the search for material combinations with suitable band alignments remains a challenge for numerous applications. In this work, we demonstrate how changes in deposition conditions can dramatically influence the functional properties of an interface, even within the same material system. The energy band alignment at the heterointerface between Cu2O and ZnO was studied using photoelectron spectroscopy with stepwise deposition of ZnO onto Cu2O and vice versa. A large variation of energy band alignment depending on the deposition conditions of the substrate and the film is observed, with valence band offsets in the range ΔEVB = 1.45–2.7 eV. The variation of band alignment is accompanied by the occurrence or absence of band bending in either material. It can therefore be ascribed to a pinning of the Fermi level in ZnO and Cu2O, which can be traced back to oxygen vacancies in ZnO and to metallic precipitates in Cu2O. The intrinsic valence band offset for the interface, which is not modified by Fermi level pinning, is derived as ΔEVB ≈ 1.5 eV, being favorable for solar cell applications.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2016 |
| Autor(en): | Siol, Sebastian ; Hellmann, Jan C. ; Tilley, S. David ; Graetzel, Michael ; Morasch, Jan ; Deuermeier, Jonas ; Jaegermann, Wolfram ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Band Alignment Engineering at Cu2O/ZnO Heterointerfaces |
| Sprache: | Englisch |
| Publikationsjahr: | 2016 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | ACS Applied Materials & Interfaces |
| Jahrgang/Volume einer Zeitschrift: | 8 |
| (Heft-)Nummer: | 33 |
| DOI: | 10.1021/acsami.6b07325 |
| Kurzbeschreibung (Abstract): | Energy band alignments at heterointerfaces play a crucial role in defining the functionality of semiconductor devices, yet the search for material combinations with suitable band alignments remains a challenge for numerous applications. In this work, we demonstrate how changes in deposition conditions can dramatically influence the functional properties of an interface, even within the same material system. The energy band alignment at the heterointerface between Cu2O and ZnO was studied using photoelectron spectroscopy with stepwise deposition of ZnO onto Cu2O and vice versa. A large variation of energy band alignment depending on the deposition conditions of the substrate and the film is observed, with valence band offsets in the range ΔEVB = 1.45–2.7 eV. The variation of band alignment is accompanied by the occurrence or absence of band bending in either material. It can therefore be ascribed to a pinning of the Fermi level in ZnO and Cu2O, which can be traced back to oxygen vacancies in ZnO and to metallic precipitates in Cu2O. The intrinsic valence band offset for the interface, which is not modified by Fermi level pinning, is derived as ΔEVB ≈ 1.5 eV, being favorable for solar cell applications. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung Profilbereiche Profilbereiche > Thermo-Fluids & Interfaces |
| Hinterlegungsdatum: | 28 Aug 2016 15:09 |
| Letzte Änderung: | 28 Aug 2016 15:09 |
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